I have received M.Sc and Ph.D degrees in Physics from Sri Venkateswara University, Tirupati in 1989 and 1994. From September 2002 to December 2003, I was a Visiting Research Professor at the Semiconductor Thin Film and Device laboratory, Gwanju Institute of Science and Technology, Gwangju, Korea, where I performed research on Ohmic and Schottky Contacts to wide bandgap semiconductors (GaN) and also, I worked as Visiting Professor at Chonbuk National University, Korea during 2013-2014. I have published more than 213 articles in refereed journals and has been author or co-author of over 146 National/ International conference papers. I have successfully guided 23 Ph.Ds in the field of Advanced Electronic Materials (GaN/InP). My current research interests are (i) Ohmic and Schottky Contacts to wide-bandgap semiconductors, (ii) Polymer-based Schottky Contacts to InP, (iii) Surface analysis of III-V and II-VI semiconductors, (iv) High-k Materials-based Schottky Contacts to GaN/InP semiconductors and (v) Deep level studies in wide bandgap semiconductors such as GaN, InP and Ga2O3. Recently, I have been recognized as the top 2% scientist in the world by Stanford University, United States of America.
General Publications
Papers Published in International Reputed Journals: 213
- Ashajyothi and V. Rajagopal Reddy
Influence of Tin Oxide (SnO2) Interlayer on the Electrical and Reverse Current Conduction Mechanism of Au/n-InP Schottky Junction and its Microstructural Properties
Thin Solid Films, Vol. 740, pp.139001 (6 pages) (2021)
- Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy, Min Hyuk Park and Chel-Jong Choi
Effects of rapid thermal annealing on the structural, optical, and electrical properties of Au/CuPc/n-Si (MPS) type Schottky barrier diodes
Applied Physics A: Materials Science and Processing, Vol. 127, pp. 803 (12 pages) (2021)
- Siva Pratap Reddy Mallem, Mallikarjuna Koduru, Kuppam Chandrasekhar, S. V. Prabhakar Vattikuti Ravi Manne, V. Rajagopal Reddy and Jung-Hee Lee
Potato Chip-Like 0D Interconnected ZnCo2O4 Nanoparticles for High-Performance Supercapacitors
Crystals, Vol. 11, pp.469 (1-9) (2021)
- V. Rajagopal Reddy, C. Venkata Prasad, V. Janardhana and Chel-Jong Choi
Electrical and carrier transport properties of Ti/a-amylase/p-InP MPS junction with a a-amylase polymer interlayer
Journal of Materials Science: Materials in Electronics, Vol. 32, pp. 8092-8105 (2021)
- M. Siva Pratap Reddy, Herie Park and V. Rajagopal Reddy
Effect of temperature on the electrical and current transport properties of Au/Nd2O3/n-GaN metal/interlayer/semiconductor (MIS) junction
Applied Physics A: Materials Science and Processing, Vol. 127, pp. 146 (8 pages) (2021)
- P.R. Sekhar Reddy, V. Janardhanam, Kyu-Hwan Shim, Sung-Nam Lee, A. Ashok Kumar, V. Rajagopal Reddy and Chel Jong Choi
Temperature dependent Schottky barrier characteristics of Al/n-type Si Schottky barrier diode with Au–Cu phthalocyanine interlayer
Thin Solid Films, Vol. 713, pp.138343 (8 pages) (2020)
- Santosh Kumar, V. K. Mariswamy, A. Kumar, A. Kandasami, A. Nimmala, S. V. S. Nageswara Rao, V. Rajagopal Reddy and S. KrishnaveniAr Ion Irradiation Effects on the Characteristics of Ru/Pt/n-GaN Schottky Barrier Diodes
Semiconductors, Vol. 54, pp.1641-1649 (2020)
- Santosh Kumar, V.K. Mariswamy, V. Rajagopal Reddy, A. Kandasami, A. Nimmala, S.V.S. Nageswara Rao, Z. Yu, X. Zhang and S. Krishnaveni
Medium energy carbon and nitrogen ion beam induced modifications in charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes
Materials, Vol. 13, pp.1299 (17 pages) (2020)
- M. Uma, M. Siva Pratap Reddy, K. Ravindranatha Reddy, V. Rajagopal Reddy, Electrical and carrier transport properties of Au/Pr6O11/n-GaN MIS structure with a high-k rare-earth oxide interlayer at high temperature range
Vacuum, Vol.174, pp. 109201 (8 pages) (2020)
- V. Rajagopal Reddy and Chel-Jong Choi
Microstructural and interface properties of Au/SrTiO3 (STO)/n-GaN heterojunction with an e-beam evaporated high-k STO interlayer
Journal of Alloys and Compounds, Vol. 823, pp. 153775 (7 pages) (2020)
- P.R. Sekhar Reddy, V. Janardhanam, Kyu-Hwan Shim, V. Rajagopal Reddy, Sung-Nam Lee and Chel-Jong Choi
Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode
Vacuum, Vol. 171, pp. 109012 (9 pages) (2020)
- P. R. Sekhar Reddy, V. Janardhanam, Hoon-Ki Lee, Kyu-Hwan Shim, Sung-Nam Lee, V. Rajagopal Reddy, and Chel-Jong Choi
Schottky barrier parameters and low-frequency noise characteristics of Au/Ni contact to n-type β-Ga2O3
Journal of Electronic Materials, Vol. 49 (1), pp. 297-305 (2020)
- M. Uma, V. Rajagopal Reddy, V. Janardhanam and Chel-Jong Choi
Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization
Journal of Materials Science: Materials in Electronics, Vol. 30, pp. 18710-18719 (2019)
- V. Rajagopal Reddy, C. Venkata Prasad and K. Ravindranatha Reddy
Chemical, electrical and carrier transport properties of Au/cytosine/undoped-InP MPS junction with a cytosine polymer
Solid State Sciences, Vol. 97, pp. 105987 (7 pages) (2019)
- M. Uma, N. Balaram, P. R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy, Hyung-Joong Yun, Sung-Nam Lee, and Chel-Jong Choi
Structural, chemical and electrical properties of Au/La2O3/n-GaN MIS junction with a high-k lanthanum oxide insulating layer
Journal of Electronic Materials, Vol. 48, No.7, pp. 4217-4225 (2019)
- M.Uma, M. Siva Pratap Reddy and V. Rajagopal Reddy
Statistical distribution of barrier heights, current conduction mechanism and voltage-dependent capacitance-frequency characteristics of Au/Fe3O4/n-GaN heterojunction
SN Applied Sciences, Vol. 1, pp. 428 (9 pages) (2019)
- V. Rajagopal Reddy and Chel-Jong Choi
Microstructural, chemical and electrical characteristics of Au/magnetite (Fe3O4)/n-GaN MIS junction with a magnetite interlayer
Vacuum, Vol. 164, pp. 233-241 (2019)
- Omer Gullu, Murat Cankaya and V. Rajagopal Reddy
Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer
Indian Journal of Physics, Vol. 93 (4), pp. 467-474 (2019)
- V.Janardhanam, I.Jyothi, Sung-Nam Lee, V. Rajagopal Reddy and Chel-Jong Choi
Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization
Thin Solid Films, Vol. 676, pp. 125-132 (2019)
- R.Padma and V. Rajagopal Reddy
Statistical analysis of the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Au/Ir/n-InGaN Schottky barrier diodes
Advanced Science Letters, Vol. 24, pp.5582-5586 (2018)
- V.Rajagopal Reddy and C. Venkata Prasad
Surface chemical states, electrical and carrier transport properties of Au/ZrO2/n-GaN MIS junction with a high-k ZrO2 as an insulating layer
Materials Science and Engineering B, Vol. 231, pp. 74-80 (2018)
- V. Janardhanam, I. Jyothi, P. R. Sekhar Reddy, Jaehee Cho, Jeong-Mook Cho, Chel-Jong Choi, Sung-Nam Lee and V. Rajagopal Reddy
Double Gaussian barrier distribution of permalloy (Ni0.8Fe0.2) Schottky contacts to n-type GaN
Superlattices and Microstructures, Vol. 120, pp. 508-516 (2018)
- B. Asha, Cirandur Sri Harsha, R.Padma and V.Rajagopal Reddy
Analysis of Schottky barrier parameters and current transport properties of V/p-type GaN Schottky junction at low temperature range
Journal of Electronic Materials, Vol. 47, pp. 4140-4148 (2018)
- N.Balaram, V.Rajagopal Reddy, P.R. Sekhar Reddy, V. Janardhanam, Chel-Jong Choi
Microstructural, chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer
Vacuum, Vol. 152, pp. 15-24 (2018)
- P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, Cirandur Sri Harsha, V. Rajagopal Reddy, Sung-Nam Lee, Jonghan Won and Chel-Jong Choi
Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction
Applied Physics A: Materials Science and Processing, Vol. 124, pp. 115 (1-10) (2018)
- C.Venkata Prasad, M. Siva Pratap Reddy, V. Rajagopal Reddy and Chinho Park
Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer
Applied Surface Science, Vol. 427, pp. 670-677 (2018)
- I.Neelakanta Reddy, Ch.Venkata Reddy, M. Sreedhar, Migyung Cho, Jaesool Shim, V.Rajagopal Reddy, Chel-Jong Choi and Dongseob Kim
Effect of seed layers (Al, Ti) on Fe-doped ZnO thin film nanowires grown on Si substrate via electron beam evaporation
Materials Science in Semiconductor Processing, Vol .71, pp. 296-303 (2017)
- P.T. Puneetha, M. Siva Pratap Reddy, Young-Woong Lee, Seong-Hoon Jeong, R. Lokanadham, Chinho Park, A. Guru Pradeep and V. Rajagopal Reddy
Electrical and interface properties of PdAl/Au metal alloyed ohmic contacts on p-type GaN for high-temperature MEMS devices
Journal of Materials Science: Materials in Electronics, Vol. 28, pp. 16903-16909 (2017)
- P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, Han-Soo Chang, Sung-Nam Lee, Myung Sun Lee, V.Rajagopal Reddy and Chel-Jong Choi
Microstructural and electrical properties of Al/n-type Si Schottky diodes with Au-CuPc nanocomposite films as interlayer
Superlattices and Microstructures, Vol.111, pp. 506-517 (2017)
- K.Sreenu, C.Venkata Prasad and V.Rajagopal Reddy
Barrier parameters and current transport characteristics of Ti/p-InP Schottky junction modified using orange G (OG) organic interlayer
Journal of Electronic Materials, Vol. 46, pp. 5746-5754 (2017)
- G.Nagaraju, K.Ravindranatha Reddy and V.Rajagopal Reddy
Electrical transport and current properties of rare-earth dysprosium (Dy) Schottky electrode on p-type GaN at various annealing temperatures
Journal of Semiconductors, Vol. 38, pp. 114001-1 to 114001-9 (2017)
- V. Manjunath, V.Rajagopal Reddy, P.R. Sekhar Reddy, V. Janardhanam and Chel-Jong Choi
Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer
Current Applied Physics, Vol. 17, pp. 980-988 (2017)
- V. Rajagopal Reddy, V. Janardhanam, Jonghan Won and Chel-Jong Choi
Microstructural, electrical and frequency-dependent properties of Au/p-Cu2ZnSnS4/n-GaN heterojunction
Journal of Colloid and Interface Science, Vol .499, pp. 180-188 (2017)
- C.Venkata Prasad, V.Rajagopal Reddy and Chel-Jong Choi
Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer
Applied Physics A: Materials Science and Processing, Vol. 123, pp. 279 (1-10) (2017)
- R.Padma and V.Rajagopal Reddy
Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode
Semiconductors, Vol. 51, pp. 1641-1649 (2017)
- V.Rajagopal Reddy, B. Asha and Chel-Jong Choi
Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN
Journal of Semiconductors, Vol. 38, No. 6, pp. 064001-1 to 064001-8 (2017)
- K.Shanthi Latha and V.Rajagopal Reddy
Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP
Indian Journal of Physics, Vol. 91(7), pp. 743-753 (2017)
- V. Janardhanam, I. Jyothi, Shim-Hoon Yuk, Chel-Jong Choi, Hyung-Joong Yun, Jonghan Won, Won-Gi Hong, Sung-Nam Lee and V.Rajagopal Reddy
Modification of Schottky barrier properties of Al/p-type Si Schottky rectifiers with graphene-oxide-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) interlayer
Journal of Vacuum Science & Technology B, Vol. 35(2), pp. 021212-1-021212-6 (2017)
- M. Siva Pratap Reddy, K.Sreenu, V. Rajagopal Reddy and Chinho Park
Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer
Journal of Materials Science: Materials in Electronics, Vol. 28, pp. 4847-4855 (2017)
- V. S. Nirwal, P. Koteswara Rao, V. Rajagopal Reddy and Moon Deock Kim
Influence of rapid thermal annealing on electrical and structural properties of Pd/Au Schottky contact to Ga-polarity GaN grown on Si (111) substrate
Journal of Alloys and Compounds, Vol. 705, pp. 782-787 (2017)
- R.Padma, K.Sreenu and V. Rajagopal Reddy
Electrical and frequency dependence characteristics of Ti/polyethylene oxide (PEO)/p-type InP organic-inorganic Schottky junction
Journal of Alloys and Compounds, Vol. 695, pp. 2587-2596 (2017)
- N.Balaram, M. Siva Pratap Reddy, V. Rajagopal Reddy and Chinho Park
Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode
Thin Solid Films, Vol. 619, pp. 231-238 (2016)
- V.Rajagopal Reddy, P.R. Sekhar Reddy, I.Neelakanta Reddy and Chel-Jong Choi
Microstructural, electrical and carrier transport properties of Au/NiO/n-GaN heterojunction with a nickel oxide interlayer
RSC Advances, Vol. 6, pp-105761-105770 (2016)
- V. Janardhanam, I. Jyothi, Shim-Hoon Yuk, Chel-Jong Choi, Sung-Nam Lee and V.Rajagopal Reddy
Effect of Oxygen Plasma Treatment on the Electrical Characteristics of Pt/n-type Si Schottky Diodes
Journal of the Korean Physical Society, Vol. 69 (8), pp. 1321-1327 (2016)
- M. Siva Pratap Reddy, P.Puneetha, V.Rajagopal Reddy, Jung-Hee Lee, S-H Jeong and Chinho Park
Temperature-dependent electrical properties and carrier transport mechanisms of TMAH treated Ni/Au/Al2O3/GaN MIS diode
Journal of Electronic Materials, Vol.45, pp-5655-5662 (2016)
- P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, S-H. Yuk, V.Rajagopal Reddy, Jae-Chan Jeong, Sung-Nam Lee and Chel-Jong Choi
Modification of Schottky barrier properties of Ti/p-type InP Schottky diode by polyaniline (PANI) organic interlayer
Journal of Semiconductor Technology and Science, Vol.16, pp-664-674 (2016)
- L.Dasaradha Rao and V.Rajagopal Reddy
Electrical parameters and series resistance analysis of Au/Y/p-InP Schottky barrier diode at room temperature
AIP Conference Proceedings, Vol. 1731, 120020-3 (2016).
- V.Rajagopal Reddy
Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal-insulator-semiconductor (MIS) diode at high temperature range
Applied Physics A: Materials Science and Processing, Vol.122, pp. 519-7 (2016)
- R. Padma, N.Balaram, I.Neelakanta Reddy and V. Rajagopal Reddy
Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure
Materials Chemistry and Physics, Vol.177, pp.92-98 (2016)
- V.Rajagopal Reddy, B. Asha and Chel-Jong Choi
Annealing effects on electrical characteristics and current transport mechanisms of the Y/p-GaN Schottky diode
Journal of Electronic Materials, Vol. 45 (7), pp. 3268-3277 (2016)
- P. Prabhu Thapaswini, R.Padma, N.Balaram, B.Bindu and V.Rajagopal Reddy
Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer
Superlattices and Microstructures, Vol. 93, pp.82-91 (2016)
- R. Padma, G. Nagaraju, V. Rajagopal Reddy and Chel-Jong Choi
Effect of annealing temperature on the electrical and structural properties of V/p-GaN Schottky structures
Thin Solid Films, Vol. 589, pp.236-242 (2016)
- D. Sri Silpa, P.Sreehith, V. Rajagopal Reddy and V. Janardhanam
Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature
Indian Journal of Physics, Vol. 90 (4), pp.399-406 (2016)
- Y. Munikrishna Reddy, T. Lakshmi Narasappa R. Padman Suvarna and V.Rajagopal Reddy
Analysis of electrical properties and carrier transport mechanisms of Ru/Ti/n-InP Schottky diodes at room temperature
International Journal of New Technologies in Science and Engineering, Vol. 2 (2), pp. 219-228 (2015)
- Y. Munikrishna Reddy, R. Padmasuvarna, T. Lakshmi Narasappa, P.Sreehith, R. Padma, L.Dasaradha Rao and V.Rajagopal Reddy
Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n-type InP
Superlattices and Microstructures, Vol. 86, pp. 280-291 (2015)
- G.Nagaraju, L.Dasaradha Rao and V.Rajagopal Reddy
Annealing effects on the electrical, structural and morphological properties of Ti/p-GaN/Ni/Au Schottky diode
Applied Physics A: Materials Science and Processing, Vol. 121, pp.131-140 (2015)
- M. Siva Pratap Reddy, Aylin Bengi, V. Rajagopal Reddy and Ja-Soon Jang
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range
Superlattices and Microstructures, Vol. 86, pp. 157-165 (2015)
- R.Padma and V.Rajagopal Reddy
Determination of the characteristics parameters of Au/PVDF/n-InP Schottky structure from current-voltage and capacitance-voltage measurements
AIP Conference Proceedings, Vol. 1665, pp.120033-3 (2015)
- M.Bhaskar Reddy, R.Padma and V.Rajagopal Reddy
Electrical parameters and current conduction mechanism in Cr/Au/n-InP Schottky structure at different annealing temperatures
AIP Conference Proceedings, Vol. 1665, pp.060009-3 (2015)
- L.Dasaradha Rao, K.Shanthi Latha, V.Rajagopal Reddy and Chel-Jong Choi
Effect of thermal annealing on the electrical and structural properties of Au/Y/p-type InP Schottky structure
Vacuum, Vol. 119, pp.276-283 (2015)
- Y. Munikrishna Reddy, R. Padmasuvarna, T. Lakshmi Narasappa, R. Padma and V.Rajagopal Reddy
Temperature-dependent electrical parameters and current transport mechanisms of Ru/Ti/n-InP Schottky diodes
Indian Journal of Physics, Vol.89(11), pp.1161-1168 (2015)
- R.Padma, K.Shanthi Latha, V.Rajagopal Reddy and Chel-Jong Choi
Rapid thermal annealing effects on the electrical and structural properties of Ru/V/n-InP Schottky barrier diode
Superlattices and Microstructures, Vol. 83, pp. 48-60 (2015)
- V. Janardhanam, Hyung-Joong Yun, I. Jyothi, Jouhahn Lee, Hyo-Bong Hong, V. Rajagopal Reddy and Chel-Jong Choi
Energy-level alignment and electrical properties of Al/p-type Si Schottky diodes with sorbitol-doped PEDOT:PSS as an organic interlayer
Journal of Alloys and Compounds, Vol. 637, pp. 84-89 (2015)
- I. Jyothi, V. Janardhanam, Yi-Rang Lim, V. Rajagopal Reddy, Kwang-Soon Ahn and Chel-Jong Choi
Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier
Materials Science in Semiconductor Processing, Vol. 30, pp. 420-428 (2015)
- Zagarzusem Khurelbaatar, K-H Shim, Jaehee Cho, H.Hong, V. Rajagopal Reddy and Chel-Jong Choi
Temperature dependent current-voltage and capacitance-voltage characteristics of an Au/n-type Si Schottky barrier diode modified using a PEDOT:PSS interlayer
Materials Transactions, Vol. 56 (1), pp. 10-16 (2015)
- V. Rajagopal Reddy, V. Manjunath, V. Janardhanam, Chang-Hyun Leem and Chel-Jong Choi
The double Gaussian distribution of barrier heights, interface states and current transport mechanisms in Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN MIS Structure
Journal of Electronic Materials, Vol. 44, (1), pp. 549-557 (2015)
- V.Rajagopal Reddy
Electrical and interfacial properties of Au/n-InP Schottky contacts with nickel phthalocyanine (NiPc) interlayer
Indian Journal of Physics, Vol.89 (5), pp. 463-469 (2015)
- V.Rajagopal Reddy, D.Sri Silpa, V.Janardhanam, H-Joong Yun, Chel-Jong Choi
Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky structure
Electronic Materials Letters, Vol. 11(1), pp. 73-81 (2015)
- C.K. Ramesha and V. Rajagopal Reddy
Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n-type 4H-SiC
Superlattices and Microstructures, Vol. 76, pp. 55-65 (2014)
- R. Padma and V. Rajagopal Reddy
Electrical characteristics and interface states of Au/poly(ethylmethacrylate)/n-InP organic-modified Schottky diode at room temperature
Journal of Optoelectronics and Advanced Materials, Vol. 16 (9-10), pp. 1131-1136 (2014)
- I. Jyothi, V. Janardhanam, V. Rajagopal Reddy and Chel-Jong Choi
Modified electrical characteristics of Pt/n-type Ge Schottky diode with a pyronine-B interlayer
Superlattices and Microstructures, Vol.75, pp. 806-817 (2014)
- M.Bhaskar Reddy and V. Rajagopal Reddy
Influence of annealing temperature on the electrical, structural and surface morphology properties of Au/Cr Schottky contacts on n-type InP
Journal of Advances in Physics, Vol. 5 (3), pp. 823-836 (2014)
- V.Rajagopal Reddy
Electrical properties and conduction mechanism of an organic-modified Au/NiPc/ n-InP Schottky barrier diode
Applied Physics A: Materials Science and Processing, Vol. 116, pp. 1379-1387 (2014)
- I. Neelakanta Reddy, V. Rajagopal Reddy, N. Sridhara, V.Sasidhara Rao, A.K.Mukhopadhyay, Anand Kumar Sharma and Arjun Dey
High emittance surface engineered metallic surfaces
Ceramics International, Vol.40, pp. 14549-14554 (2014)
- V.Rajagopal Reddy, V.Manjunath, V.Janardhanam, Yeon-Ho Kil and Chel-Jong Choi
Electrical properties and current transport mechanisms of Au/n-GaN Schottky structure with solution processed high-k BaTiO3 interlayer
Journal of Electronic Materials, Vol.43 (9), pp. 3499-3507 (2014)
- I. Neelakanta Reddy, V. Rajagopal Reddy, Arjun Dey, N. Sridhara, S. Basavaraja, Parthasarathi Bera, C. Anandan and Anand Kumar Sharma
Microstructural studies of e-beam evaporated alumina thin films
Surface Engineering, Vol. 30 (8), pp. 594-599 (2014)
- I. Neelakanta Reddy, Parthasarathi Bera, V. Rajagopal Reddy, N. Sridhara, Arjun Dey, C. Anandan and Anand Kumar Sharma
XPS study of sputtered alumina thin films
Ceramics International, Vol. 40, pp. 11099-11107 (2014)
- I. Neelakanta Reddy, V. Rajagopal Reddy, N. Sridhara, V. Sasidhara Rao, M. Bhattacharya, P.Bandyopadhyay, S. Basavaraja, A.K.Mukhopadhyay, A.K.Sharma and A.Dey
Pulsed rf magnetron sputtered alumina thin films
Ceramics International, Vol.40, pp. 9571-9582 (2014)
- G. Murali, D. Amaranatha Reddy, S. Sambasivam, R.P. Vijayalakshmi and V. Rajagopal Reddy
CdS nanoflowers and interpenetrated nanorods grown on Si substrate: Structural, optical properties and growth mechanism
Materials Chemistry and Physics, Vol. 146, pp. 399-405 (2014)
- V.Rajagopal Reddy, D.Sri Silpa, Hyung-Joong Yun and Chel-Jong Choi
Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures
Superlattices and Microstructures, Vol. 71, pp. 134-146 (2014)
- V. Janardhanam, I. Jyothi, Ji-Hyun Lee, Jae-Yeon Kim, V. Rajagopal Reddy and Chel-Jong Choi
Electrical properties and carrier transport mechanism of Au/n-GaN Schottky
contact modified using a copper pthalocyanine (CuPc) interlayer
Materials Transactions, Vol. 55 (5) pp. 758-762 (2014)
- V.Rajagopal Reddy, V. Janardhanam, Jin-Woo Ju, Hyobong Hong and Chel-Jong Choi
Electrical properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN metal-insulator-semiconductor (MIS) structure
Semiconductor Science and Technology, Vol. 29, pp. 075001 (2014)
- V.Rajagopal Reddy, V. Janardhanam, Min-Sung Kang and Chel-Jong Choi
Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN
Journal of Materials Science: Materials in Electronics, Vol.25 (5), pp. 2379-2386 (2014)
- V.Rajagopal Reddy
Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer
Thin Solid Films, Vol. 556, pp. 300-306 (2014)
- B.Prasanna Lakshmi and V.Rajagopal Reddy
Electrical properties of rapidly annealed Au/Ta2O5/n-GaN metal-insulator-semiconductor (MIS) structure
Journal of Nano Science and Nano Technology, Vol. 2, pp. 8-11 (2014)
- V.Rajagopal Reddy, V.Janardhanam, Chang-Hyun Leem and Chel-Jong Choi
Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode
Superlattices and Microstructures, Vol. 67, pp.242-255 (2014)
- R.Padma and V.Rajagopal Reddy
Electrical properties of Ir/n-InGaN/Ti/Al Schottky barrier diode in a wide temperature range
Advanced Materials Letters, Vol. 5(1), pp.31-38 (2014)
- V.Rajagopal Reddy, V. Janardhanam, Jin-Woo Ju, Hyung-Joong Yun and Chel-Jong Choi
Electronic parameters and carrier transport mechanism of high-barrier Se Schottky contacts to n-type GaN
Solid State Communications, Vol. 179, pp. 34-38 (2014)
- L.Dasaradha Rao, V.Rajagopal Reddy, V. Janardhanam, Min-Sung Kang, Byoung-Chul Son and Chel-Jong Choi
Electrical and structural properties of rapidly annealed rare-earth metal Er Schottky contacts on p-type InP
Superlattices and Microstructures, Vol. 65, pp.206-218 (2014)
- M. Siva Pratap Reddy, Dong-Hyeok Son, Jung-Hee Lee, Ja-Soon Jang and V. Rajagopal Reddy
Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode
Materials Chemistry and Physics, Vol. 143, pp. 801-805 (2014)
- A.Umapathi and V.Rajagopal Reddy
Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures
Microelectronic Engineering, Vol. 114, pp. 31-37 (2014)
- M. Siva Pratap Reddy, Hee-Sung Kang, Jung- Hee Lee, V. Rajagopal Reddy and Ja-Soon Jang
Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n-InP Schottky barrier interface
Journal of Applied Polymer Science, Vol. 131 (2), pp. 39773 (1-10) (2014)
- V.Rajagopal Reddy, L.Dasaradha Rao, V. Janardhanam, Min-Sung Kang and Chel-Jong Choi
Electrical properties and interface states of rare-earth metal ytterbium Schottky contacts to p-type InP
Materials Transactions, Vol. 54 (12), pp. 2173-2179 (2013)
- B.Prasanna Lakshmi, V.Rajagopal Reddy, V.Janardhanam, M.Siva Pratap Reddy and Jung-Hee Lee
Effect of annealing temperature on the electrical properties of Au/Ta2O5/n-GaN metal-insulator-semiconductor (MIS) structure
Applied Physics A: Materials Science and Processing, Vol. 113, pp. 713-722 (2013)
- M. Siva Pratap Reddy, Mi-Kyung Kwon, Hee-Sung Kang, Dong-Seok Kim, Jung-Hee Lee and V. Rajagopal Reddy
Influence of series resistance and interface state density on electrical characteristics of Ru/Ni/n-GaN Schottky structure
Journal of Semiconductor Technology and Science, Vol. 13(5), pp.492-499 (2013)
- V. Janardhanam, Hyung-Joong Yun, Jouhan Lee, V. Rajagopal Reddy, Hyobong Hong, Kwang-Soon Ahn and Chel-Jong Choi
Depinning of the Fermi-level at the Ge Schottky interface through Se treatment
Scripta Materialia, Vol. 69, pp.809-811 (2013)
- I. Neelakanta Reddy, V. Rajagopal Reddy, N. Sridhara, S. Basavaraja, A.K. Sharma and Arjun Dey
Optical and microstructural characterisations of pulsed rf magnetron sputtered alumina thin film
Journal of Materials Science & Technology, Vol.29, pp.929-936 (2013)
- V.Rajagopal Reddy, A.Umapathi and L.Dasaradha Rao
Effect of annealing on the electronic parameters of Au/poly(ethylmethacrylate)/n-InP Schottky diode with organic interlayer
Current Applied Physics, Vol.13, pp.1604-1610 (2013)
- I. Neelakanta Reddy, V. Rajagopal Reddy, N. Sridhara, S. Basavaraja, M. Venkatanarayana, V. Sasidhara Rao, A. K. Sharma and Arjun Dey
Development of SiO2 based thin film on metal foils for space application
Ceramics International, Vol.39, pp.8493-8498 (2013)
- V. Janardhanam, Yeon-Ho Kil, Kyu-Hwan Shim, V. Rajagopal Reddy and Chel-Jong Choi
Effect of rapid thermal annealing on the electrical and structural properties of Se Schottky contacts to n-type Si
Materials Transactions, Vol. 54 (7), pp.1067-1072 (2013)
- R.Padma, B.Prasanna Lakshmi and V.Rajagopal Reddy
Capacitance-frequency (C-f) and conductance-frequency (G-f) characteristics of Ir/n-InGaN Schottky diode as a function of temperature
Superlattices and Microstructures, Vol. 60, pp.358-369 (2013)
- L. Dasaradha Rao, N. Ramesha Reddy, A. Ashok Kumar and V. Rajagopal Reddy
Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP
AIP conference proceedings, Vol. 1536, pp. 471-472 (2013)
- R. Padma, B. Prasanna lakshmi and V. Rajagopal Reddy
Thermal annealing effects on electrical properties of Ir/Ru Schottky contacts on n-InGaN
AIP conference proceedings, Vol. 1536, pp. 469-470 (2013)
- A. Umapathi, M. Siva Pratap Reddy, K. Ravindranatha Reddy and V. Rajagopal Reddy
Electrical properties of Au/n-InP and Au/PVA/n-InP Schottky structures
AIP conference proceedings, Vol. 1536, pp. 467-468 (2013)
- V.Rajagopal Reddy, A.Umapathi and S.Sankar Naik
Influence of annealing on electrical properties of an organic thin layer based n-type InP Schottky barrier diode
Journal of Electronic Materials, Vol.42, pp.1282-1289 (2013)
- A.Ashok Kumar, L.Dasaradha Rao, V.Rajagopal Reddy and Chel-Jong Choi
Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
Current Applied Physics, Vol.13, pp.975-980 (2013)
- P.Koteswara Rao, Byung-Guon Park, Sang-Tae Lee, Moon-Deock, Kim, Jae-Eung Oh, Tae-Geun Kim and V. Rajagopal Reddy
Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode
Thin Solid Films, Vol. 534, pp. 603-608 (2013)
- M. Bhaskar Reddy, V. Rajagopal Reddy, D. Subba Reddy and Chel-Jong Choi
Electrical characteristics and interfacial reactions of rapidly annealed double metal Pd/Ti Schottky structure on n-type InP
Journal of Optoelectronics and Advanced Materials, Vol. 15, pp.169-175 (2013)
- Y. Munikrishana Reddy, M. K. Nagaraj, M. Siva Pratap Reddy, Jung-Hee Lee and V. Rajagopal Reddy
Temperature-dependent Current-voltage (I-V) and Capacitance-voltage (C-V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes
Brazilian Journal of Physics, Vol.43, pp.13-21 (2013)
- R.Padma, B.Prasanna Lakshmi, M.Siva Pratap Reddy and V.Rajagopal Reddy
Electrical and structural properties of Ir/Ru Schottky rectifiers on n-type InGaN at different annealing temperatures
Superlattices and Microstructures, Vol. 56, pp.64-76 (2013)
- I. Neelakanta Reddy, V.Rajagopal Reddy, N.Sridhara, A.Rajendra, V. Sashidhara Rao, Arjun Dey and A.K. Sharma
Development and environmental stability of ITO thin film for spacecraft application
Materials Research Innovations, Vol.17, pp.22-26 (2013)
- A.Ashok Kumar, V.Rajagopal Reddy, V.Janardhanam, Hyun-Deok Yang, Hyung-Joong Yun and Chel-Jong Choi
Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer
Journal of Alloys and Compounds, Vol.549, pp.18-21 (2013)
- B. Srinivasa Rao, B. Rajesh Kumar, V. Rajagopal Reddy, T. Subba Rao and G. Venkata Chalapathi
AC impedance spectroscopy studies on Ni doped CdS nanoparticles prepared by chemical co-precipitation method
Chalcogenide Letters, Vol. 9, No.12, 517-525 (2012)
- V.Rajagopal Reddy, R.Padma, M.Siva Pratap Reddy and Chel-Jong Choi
Annealing effects on electrical, structural and surface morphological properties of Ir/n-InGaN Schottky structure
Physica Status Solidi (A),Vol.209 (10), pp.2027-2033 (2012)
- Y. Munikrishna Reddy, M.K Nagaraj, S. Sankar Naik and V. Rajagopal Reddy
Annealing effects on electrical properties and interfacial reactions of Ni/Cu Schottky rectifiers on n-type InP
Journal of Modern Physics, Vol.3, pp.538-545 (2012)
- B. Srinivasa Rao, V. Rajagopal Reddy, B. Rajesh Kumar and T. Subba Rao
Synthesis and characterization of nickel doped CdS nanoparticles
International Journal of Nanoscience, Vol.11 (3), pp.1240006-1-5 (2012)
97. V.Lakshmi Devi, I.Jyothi and V.Rajagopal Reddy
Electrical transport properties of Ru/Cu/n-InP Schottky barrier diode based on temperature-dependent I-V and C-V measurements
Indian Journal of Physics, Vol.86 (8), 687-695 (2012)
- V.Rajagopal Reddy and N.Nanda Kumar Reddy
Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies
Superlattices and Microstructures, Vol.52, pp.484-499 (2012)
- S.Sankar Naik and V.Rajagopal Reddy
Temperature dependency and current transport mechanisms of Pd/V/n-type InP Schottky rectifiers
Advanced Materials Letters, Vol.3, No.3, pp.188-196 (2012)
- V.Rajagopal Reddy, M.Siva Pratap Reddy, A.Ashok Kumar and Chel-Jong Choi
Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure
Thin Solid Films, Vol. 520, pp. 5715-5721 (2012)
- S.Sankar Naik and V.Rajagopal Reddy
Electrical transport characteristics and deep level transient spectroscopy of Ni/V/n-InP Schottky barrier diodes
Journal of Nano- and Electronic Physics, Vol. 4, No.2, pp. 02006-1-02006-9 (2012)
- V.Lakshmi Devi, I.Jyothi, V.Rajagopal Reddy and Chel-Jong Choi
Schottky barrier parameters and interfacial reactions of rapidly annealed Au/Cu bilayer metal scheme on n-type InP
The Open Applied Physics Journal, Vol.5, pp. 1-9 (2012)
- B.Prasanna Lakshmi, M.Siva Pratap Reddy, A.Ashok Kumar and V.Rajagopal Reddy
Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range
Current Applied Physics, Vol.12, No.3, pp. 765-772 (2012)
- N.Nanda Kumar Reddy and V.Rajagopal Reddy
Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I-V-T and C-V-T measurements
Bulletin of Materials Science, Vol. 35, No.1, pp. 53-61 (2012)
- V.Rajagopal Reddy, B.Prasanna Lakshmi and R.Padma
Electrical properties of rapidly annealed Ir and Ir/Au Schottky contacts on n-type InGaN
Journal of Metallurgy, Vol.2012, pp.1-9 (2012), doi:10.1155/2012/531915
- S.Sankar Naik, V.Rajagopal Reddy, Chel-Jong Choi and Jong-Seong Bae
Electrical and structural properties of Pd/V/n-type InP(100) Schottky structure as a function of annealing temperature
Surface and Interface Analysis, Vol.44, pp.98-104 (2012)
- V.Lakshmi Devi, I.Jyothi and V.Rajagopal Reddy
analysis of temperature-dependent Schottky barrier parameters of Cu/Au Schottky contacts to n-InP
Canadian Journal of Physics, Vol. 90, No. 1, pp. 73-81 (2012)
- A. Ashok Kumar, V. Rajagopal Reddy, V. Janardhanam, Min-Woo Seo, Hyobong Hong, Kyu-Sang Shin and Chel-Jong Choi
Electrical properties of Pt/n-Ge Schottky contact modified using copper phthalocyanine (CuPc) interlayer
Journal of Electrochemical Society, Vol. 159(1), pp. H33-H37 (2012)
- V.Lakshmi Devi, I.Jyothi, V.Rajagopal Reddy and Chel-Jong Choi
Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n-type InP
Physica Status Solidi (A), Vol.209, No.1, pp.105-112 (2012)
- V.Lakshmi Devi, I.Jyothi and V.Rajagopal Reddy
Temperature-dependent Schottky barrier characteristics of Cu/Au Schottky contacts to n-InP
AIP conference proceedings, Vol. 1393, pp. 369-370 (2011)
- S.Sankar Naik and V.Rajagopal Reddy
Electrical transport characteristics of Pd/V/n-InP Schottky diode from I-V-T and C-V-T measurements
Journal of Nano- and Electronic Physics, Vol. 3, No.1, pp. 1048-1055 (2011)
- N.Nanda Kumar Redd and V.Rajagopal Reddy
Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN
Journal of Nano- and Electronic Physics, Vol. 3, No.1, pp. 921-925 (2011)
- B.Srinivasa Rao, B.Rajesh Kumar, V.Rajagopal Reddy and T.Subba Rao
X-ray diffraction and transmission electron microscopy studies on nickel doped CdS nanoparticles
Digest Journal of Nanomaterials and Biostructures, Vol. 6, No 4, pp. 1709-1716 (2011)
- M.Siva Pratap Reddy, V.Rajagopal Reddy, I.Jyothi and Chel-Jong Choi
Electrical, structural and morphological characteristics of rapidly annealed Ni/Pd Schottky rectifiers on n-type GaN
Surface and Interface Analysis, Vol.43, No.9, pp.1251-1256 (2011)
- M.Siva Pratap Reddy, B.Prasanna Lakshmi and A.Ashok Kumar and V.Rajagopal Reddy,
Effect of series resistance and interface state density on electrical properties of Au/SiO2/n-GaN Schottky diodes
Journal of Nano- and Electronic Physics, Vol. 3, No.1, pp. 832-837 (2011)
- N.Nanda Kumar Reddy, V.Rajagopal Reddy and Chel-Jong Choi
Influence of rapid thermal annealing effect on electrical and structural properties of Pd/Ru Schottky contacts to n-type GaN
Materials Chemistry and Physics, Vol. 130, pp. 1000-1006 (2011)
- V.Rajagopal Reddy, D.Subba Reddy, S.Sankar Naik and Chel-Jong Choi
Structural, electrical and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n-type InP
Physica Status Solidi (A), Vol. 208, pp. 2406-2414 (2011)
- N.Nanda Kumar Reddy, I.Jyothi and V.Rajagopal Reddy
Double Gaussian distribution of inhomogeneous barrier height in Ru/Pt/n-GaN Schottky barrier diodes
AIP conference proceedings, Vol. 1349, pp. 1067-1068 (2011)
- B. Srinivasa Rao, B. Rajesh Kumar, G.Venkata Chalapathi, V. Rajagopal Reddy, and T. Subba Rao
Structural properties of nickel doped cadmium sulfide
Journal of Nano- and Electronic Physics, Vol. 3, No.1, pp. 620-625 (2011)
- V.Rajagopal Reddy, M.Siva Pratap Reddy, B.Prasanna Lakshmi and A.Ashok Kumar
Electrical characterization of Au/n-GaN metal-semiconductor and Au/SiO2/n-GaN metal-insulator-semiconductor structures
Journal of Alloys and Compounds, Vol. 509, pp.8001-8007(2011)
- N.Nanda Kumar Reddy, V.Rajagopal Reddy and Chel-Jong Choi
Electrical characteristics and interfacial reactions of rapidly annealed Pt/Ru Schottky contacts on n-type GaN
Physica Status Solidi (A), Vol.208, No.7, pp.1670-1677 (2011)
- V.Janardhanam, A.Ashok Kumar, V.Rajagopal Reddy and Chel-Jong Choi
Study of deep level defect behavior in undoped n-InP (100) after rapid thermal annealing
Microelectronic Engineering, Vol.88, No.8, pp.506-508 (2011)
- B. Srinivasa Rao, B. Rajesh Kumar, V. Rajagopal Reddy, and T. Subba Rao
Optical properties of nickel doped CdS nanoparticles
IEEE conference proceedings of ICONE, Vol. 17948, pp. 115-117 (2011)
- A. Ashok Kumar, V. Janardhanam and V. Rajagopal Reddy
Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure
Journal of Materials Science: Materials in Electronics, Vol.22, pp.854-861(2011)
- D.Subba Reddy, M.Siva Pratap Reddy and V Rajagopal Reddy
Analysis of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of Pt/Ti Schottky contacts on n-type InP
Optoelectronics and Advanced Materials-Rapid Communications, Vol.5 (4), pp.448-454 (2011)
- D.Subba Reddy, M.Bhaskar Reddy, N.Nanda Kumar Reddy and V.Rajagopal Reddy
Schottky barrier parameters of Pd/Ti contacts on n-type InP revealed from I-V-T and C-V-T measurements
Journal of Modern Physics, Vol.2, pp.113-123 (2011)
- B.Srinivasa Rao, B.Rajesh Kumar, V.Rajagopal Reddy, T.Subba Rao
Preparation and characterization of CdS nanoparticles by chemical co-precipitation technique
Chalcogenide Letters Vol. 8, No.3, pp. 177-185 (2011)
- M.Siva Pratap Reddy, A.Ashok Kumar and V.Rajagopal Reddy
Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature
Thin Solid Films, Vol. 519, pp. 3844-3850 (2011)
- B.Srinivasa Rao, B.Rajesh Kumar, V.Rajagopal Reddy, T.Subba Rao and G.Venkata Chalapathi
Influence on optical properties of nickel doped cadmium sulfide
Chalcogenide Letters Vol. 8, No.1, pp. 39-44 (2011)
- B.Srinivasa Rao, B.Rajesh Kumar, V.Rajagopal Reddy, T.Subba Rao and G.Venkata Chalapathi
Structural characterization on nickel doped cadmium
Chalcogenide Letters Vol. 8, No.2, pp. 53-58 (2011)
- I.Jyothi, V.Rajagopal Reddy and Chel-Jong Choi
Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface
Journal of Materials Science: Materials in Electronics, Vol.22, pp.286-291 (2011)
- S.Sankar Naik, V.Rajagopal Reddy, Chel-Jong Choi and Jong-Seong Bae
Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process
Journal of Materials Science, Vol.46, pp.558-565 (2011)
- Y.Munikrishna Reddy, T.Lakshmi Narasappa, M.K.Naga Raju, S.Shankar Naik, M.Siva Pratap Reddy and V.Rajagopal Reddy
Barrier characteristics of Ni/n-InP (100) Schottky contacts based on temperature dependent I-V measurements
International Journal of Materials Physics, Vol.1, pp.79-85 (2010)
- N.Nanda Kumar Reddy and V.Rajagopal Reddy
Electrical transport parameters of Pt/Au Schottky contacts on n-type InP in a wide temperature range
Optoelectronics and Advanced Materials-Rapid Communications, Vol.4, pp.1229-1238 (2010)
- S.Shankar Naik and V.Rajagopal Reddy
Analysis of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of Ni/Au Schottky contacts on n-type InP
Superlattices and Microstructures, Vol.48, pp.330-342 (2010)
- I.Jyothi and V.Rajagopal Reddy
Electrical, structural and surface morphological properties of thermally stable low-resistance W/Ti/Au multilayer ohmic contacts to n-type GaN
Applied Surface Science, Vol.257, pp.67-71 (2010)
- M.Siva Pratap Reddy, V.Rajagopal Reddy and Chel-Jong Choi
Electrical properties and interfacial reactions of rapidly annealed Ni/Ru Schottky rectifiers on n-type GaN
Journal of Alloys and Compounds, Vol.503, pp.186-191 (2010)
- M.Bhaskar Reddy, V.Janardhanam, A.Ashok Kumar, V.Rajagopal Reddy, P. Narasimha Reddy, Chel-Jong Choi, Ranju Jung and Sung Hur
The influence of rapid thermal annealing on electrical and structural properties of Pt/Au Schottky contacts to n-type InP
Journal of Materials Science: Materials in Electronics, Vol.21 (8), pp.804-810 (2010)
- I.Jyothi, V.Rajagopal Reddy, M.Siva Pratap Reddy, Chel-Jong Choi and J.S.Bae
Structural and electrical properties of rapidly annealed Ni/Mo Schottky barriers on n-type GaN
Physica Status Solidi (A), Vol.207, pp. 753-759 (2010)
- M.Bhaskar Reddy, V.Janardhanam, A.Ashok Kumar, V.Rajagopal Reddy and P. N. Reddy
Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (111) diodes
Current Applied Physics, Vol.10, pp.687-692 (2010)
- V.Rajagopal Reddy, M.Sivapratap Reddy and P.Koteswara Rao
Effect of rapid thermal annealing on deep level defects in the Si-doped GaN
Microelectronic Engineering, Vol. 87, pp.117-121 (2010)
- V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy, and P. N.Reddy
Investigation on deep level defects in rapid thermal annealed undoped n-type InP
Journal of Materials Science: Materials in Electronics, Vol.21, pp.285-290 (2010)
- V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy and P. N.Reddy
Effects of annealing temperature on electrical and structural properties of Mo/n-InP (100) Schottky contacts
Surface and Interface Analysis, Vol.41, pp. 905-910 (2009)
- V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy and P. N. Reddy
Study of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of molybdenum Schottky contacts on n-InP
Journal of Alloys and Compounds, Vol.485, pp.467-472 (2009)
- V. Janardhanam, A. Ashok Kumar, M.Bhaskar Reddy, V. Rajagopal Reddy, P. N. Reddy, A. K. Balamurugan and A.K. Tyagi
Behavior of rapid thermal annealing on the electrical and structural properties of Ru/n-InP (100) Schottky rectifiers
Physica Status Solidi (A), Vol. 206, pp.2658-2664 (2009)
- V.Rajagopal Reddy, M.Ravinandan, P.Koteswara Rao and Chel-Jong Choi
Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN
Journal of Materials Science: Materials in Electronics, Vol.20, pp.1018-1025 (2009)
- M.Bhaskar Reddy, A.Ashok Kumar, V.Janardhanam, V.Rajagopal Reddy and P. N.Reddy
Current-voltage-temperature (I-V-T) characteristics of Pd/Au Schottky contacts on n-InP (111)
Current Applied Physics, Vol.9, pp. 972-977 (2009)
- M.Ravinandan, P.Koteswara Rao and V.Rajagopal Reddy
Analysis of current–voltage characteristics of Pd/Au Schottky structure on n-type GaN in wide temperature range
Semiconductor Science and Technology, Vol. 24, pp. 035004 (2009)
- M.Bhaskar Reddy, V.Janardhanam, A.Ashok Kumar, V.Rajagopal Reddy and P. N.Reddy
Rapid thermal annealing effects on electrical and structural properties of Pd/Au Schottky contacts to n-type InP (111)
Physica Status Solidi (A), Vol. 206(2), pp. 250-255 (2009)
- P.Koteswara Rao and V. Rajagopal Reddy
Effect of annealing temperature on electrical and structural properties of transparent indium-tin-oxide electrode to n-type GaN
Materials Chemistry and Physics, Vol. 114, pp. 821-826 (2009)
- A.Ashok Kumar, V.Janardhanam, V.Rajagopal Reddy and P. N.Reddy
Evaluation of Schottky barrier parameters of Pd/Pt Schottky contacts on n-InP (100) in wide temperature range
Superlattices and Microstructures, Vol. 45, pp. 22-32 (2009)
- V.Rajagopal Reddy, Sang-Ho Kim, Hyun-Gi Hong, Sang-Won Yoon, Jae- Pyoung Ahn and Tae-Yeon Seong
Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN
Journal of Materials Science: Materials in Electronics, Vol. 20, pp.9-13 (2009)
- Sung-Yong Chang, Myeong-I Jeong, S.V. Jagadeesh Chandra, Yong-Boo Lee, Hyo-Bong Hong, V. Rajagopal Reddy and Chel-Jong Choi
Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films
Materials Science in Semiconductor Processing, Vol.11, pp.122-125 (2008)
- V.Janardhanam, A.Ashok Kumar, V.Rajagopal Reddy and P. N.Reddy
Electrical transport characteristics of ruthenium/n-InP Schottky diodes from current-voltage-temperature (I-V-T) measurements
Optoelectronics and Advanced Materials-Rapid Communications, Vol.2, pp.735-742 (2008)
- M.Ravinandan, P.Koteswara Rao and V.Rajagopal Reddy
Temperature dependence of current-voltage (I-V) characteristics of Pt/Au Schottky contacts on n-type GaN
Journal of Optoelectronics and Advanced Materials, Vol.10, pp.2787-2792 (2008)
- V.Rajagopal Reddy, M.Ravinandan, P.Koteswara Rao and Chel-Jong Choi
Electrical and structural properties of rapidly annealed Pd/Mo Schottky contacts on n-type GaN
Semiconductor Science and Technology, Vol.23, pp. 095026 (2008)
- P.Koteswara Rao and V.Rajagopal Reddy
Temperature-dependent electrical properties of Au Schottky contact and deep level defects in n-type GaN
Optoelectronics and Advanced Materials-Rapid Communication, Vol.2, pp. 410-414 (2008)
- K.Jagadeswara Reddy, V.Rajagopal Reddy and P.N. Reddy
Thermal annealing behaviour on Schottky barrier parameters and structural properties of Au contacts to n-type GaN
Journal of Materials Science: Materials in Electronics, Vol. 19, pp. 333-338 (2008)
- V.Rajagopal Reddy and P.Koteswara Rao
Annealing temperature effect on electrical and structural properties of Cu/Au Schottky contacts to n-type GaN
Microelectronic Engineering, Vol. 85, pp. 470-476 (2008)
- A. Ashok Kumar, V.Janardhanam, V. Rajagopal Reddy and P. Narasimha Reddy
Temperature dependence of current-voltage characteristics of the Pd/InP Schottky contacts
Journal of Optoelectronics and Advanced Materials, Vol.9 (No.12), pp. 3877-3880 (2007)
- V. Rajagopal Reddy and N. Ramesha Reddy
Influence of thermal annealing temperature on electrical properties of Rh and Rh/Au Schottky contacts to n-type GaN
Journal of Optoelectronics & Advanced Materials, Vol.9 (No.12), pp. 3871-3876 (2007)
- V. Rajagopal Reddy and Chel-Jong Choi
Electrical and microstructural properties of low-resistance Ti/Re/Au ohmic contacts to n-type GaN
Physica Status Solidi (A) Vol. 204 (10), pp. 3392-3397 (2007)
- H.B. Bhuvaneswari, K.P.S.S.Hembram, V.Rajagopal Reddy and G.Mohan Rao
Studies on metal–semiconductor contacts with ZrN as metal layer
Optoelectronics and Advanced Materials – Rapid Communication, Vol. 1 (6), pp.294-298 (2007)
- V.Rajagopal Reddy, P.Koteswara Rao and C.K.Ramesh
Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts
Materials Science & Engineering B, Vol.137, pp. 200-204 (2007)
- K.Jagadeswara Reddy, V.Rajagopal Reddy, P.N.Reddy and K.S.R.K.Rao
Effects of thermal annealing on electrical and structural characteristics of Pd/n-GaN Schottky diode
Optoelectronics and Advanced Materials – Rapid Communication, Vol. 1(3), pp.91-95 (2007)
- V.Rajagopal Reddy, N.Ramsesha Reddy and Chel-Jong Choi
The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN
Semiconductor Science and Technology, Vol.21, pp. 1753-1757 (2006)
- C.K.Ramesh, V.Rajagopal Reddy and K.S.R.Koteswara Rao
Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN
Journal of Materials Science: Materials in Electronics, Vol.17, pp. 999-1004 (2006)
- N.Ramesha Reddy, V.Rajagopal Reddy and Chel-Jong Choi
Microstructural properties of thermally stable Ti/W/Au ohmic contacts on n-type GaN
Microelectronic Engineering, Vol.83, pp. 1981-1985 (2006)
- H.B.Bhuvaneswari, V.Rajagopal Reddy and G.Mohan Rao
Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices
Journal of Materials Science: Materials in Electronics, Vol.17, pp. 335-339 (2006)
- V.Rajagopal Reddy, C.K.Ramesh and Chel-Jong Choi
Structural and Electrical properties of Mo/n-GaN Schottky diodes
Physica Status Solidi (A), Vol. 203 (3), pp. 622-627 (2006)
- V.Rajagopal Reddy, N.Ramesha Reddy and Chel-Jong Choi
Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN
Solid-State Electronics, Vol.49 (7), pp. 1213-1216 (2005)
- V.Rajagopal Reddy
Study of the electrical, structural and surface morphological characteristics of Pt/Re/Au ohmic contacts on p-type GaN
Materials Chemistry and Physics, Vol. 93, pp. 286-290 (2005)
- H.B.Bhuvaneswari, V.Rajagopal Reddy and G.Mohan Rao
Refractory metal nitride rectifying contact of ZrN on silicon
Journal of the Instrument Society of India, Vol. 35 (1), pp. 149-156 (2005)
- V.Rajagopal Reddy and T.Y. Seong
Electrical and structural properties of Ti/W/Au ohmic contacts on n-type GaN
Semiconductor Science and Technology, Vol.19, pp. 975-979 (2004)
- C.K.Ramesh, V.Rajagopal Reddy and Chel-Jong Choi
Electrical characteristics of molybdenum Schottky contacts on n-type GaN
Materials Science and Engineering B, Vol.112 (1), pp. 30-33 (2004)
- H.B. Bhuvaneswari, V.Rajagopal Reddy, R.Chandramani, and G.M Rao
Annealing Effects on Zirconium Nitride films
Applied Surface Science, Vol. 230, pp. 88-93 (2004)
- V.Rajagopal Reddy, Sang-Ho Kim, June-O Song and Tae-Yeon Seong
Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN
Solid-State Electronics, Vol.48, pp. 1563-1568 (2004)
- V.Rajagopal Reddy, Sang-Ho Kim, and Tae-Yeon Seong
Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN
Applied Physics A: Materials Science and Processing, Vol. 79, pp. 211 (2004)
- V.Rajagopal Reddy, Sang-Ho Kim, and Tae-Yeon Seong
Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN
Journal of Electronic Materials, Vol.33, pp. 395 (2004)
- V.Rajagopal Reddy and C.K.Ramesh
Low-resistance ohmic contacts to n-type GaN using Ti/Al/Re/Au multilayer scheme
Journal of Optoelectronics and Advanced Materials, Vol.6, pp. 177-182 (2004)
- V.Rajagopal Reddy, C.K.Ramesh and P.Narasimha Reddy
Interfacial reaction and surface morphology of Pd/Re contact schemes to p-GaN
Indian Journal of Pure and Applied Physics, Vol. 42(5), pp. 361-365 (2004)
- H.B. Bhuvaneswari, I. Nithiya Priya, R.Chandramani, V.Rajagopal Reddy and G.Mohan Rao
Studies on Zirconium nitride films deposited by reactive magnetron sputtering
Crystal Research Technology, Vol.38, pp. 1047-1051 (2003)
- V.Rajagopal Reddy, Sang-Ho Kim, June-O Song and Tae-Yeon Seong
Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaN
Semiconductor Science and Technology, Vol.18, pp. 541-544 (2003)
- S. V.Reddy, V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
Gamma irradiation of Platinum and Palladium related deep levels in silicon
Indian Journal of Pure and Applied Physics, Vol. 38, No. 4, pp. 258-262 (2000)
- S.V. Reddy, V. Rajagopal Reddy, P.N.Reddy and B.P.N. Reddy
Computer (IBM PC) based I-V, C-V system
Journal of the Instrument Society of India, Vol. 29 (3), pp. 136-140 (1999)
- S.V.Reddy, V. Rajagopal Reddy, P.N.Reddy, B.P.N.Reddy and KSRK Rao
I-V, C-V and DLTS studies in Au/n-Si: Pd Schottky diodes
Indian Journal of Pure and Applied Physics, Vol. 37, pp. 612-615 (1999)
- V. Rajagopal Reddy, S.V.Reddy, P.N. Reddy and B.P.N. Reddy
A general purpose computer controlled data acquisition system and temperature controller
Indian Journal of Engineering and Materials Science, Vol. 5, pp. 117-120 (1998)
- V.Rajagopal Reddy, Y.M.K. Reddy, P.N.Reddy and B.P.N. Reddy
Solid state H1 magnetic relaxation and molecular motion in aromatic amino acids
Indian Journal of Pure and Applied Physics, Vol. 35, pp. 653-656 (1997)
- V.Rajagopal Reddy, P.N.Reddy and B.P.N. Reddy
A simple and inexpensive automated pulse programmer for pulsed NMR
Indian Journal of Engineering and Materials Science, Vol. 3, pp. 88-90 (1996)
- V.Rajagopal Reddy, P.N.Reddy, B.P.N.Reddy and Y.M.K.Reddy
Conformation dependent C-13 NMR chemical shift of (bromo-phe)n, (fluoro-Tyr)n and (bromo-Tyr)n in the solid state determined by CP/MAS method
Bulletin of Pure and Applied Science, Vol. 14D (No.1-2), pp. 17-22 (1995)
- V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
A Microcomputer (IBMPC) controlled data acquisition system for pulsed NMR spectrometer
Journal of the Instrument Society of India, Vol. 25, pp. 27-33 (1995)
- V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
Solid state proton relaxation and molecular motion of biomolecular compounds
Indian Journal of Pure and Applied Physics, Vol. 33, pp. 357-361 (1995)
- V. Rajagopal Reddy, P.N. Reddy and B.P.N.Reddy
A Microcomputer (IBM PC) based pulsed NMR Spectrometer
Indian Journal of Engineering and Materials Science, Vol. 2, pp. 118-124 (1995)
Books
- Novel Schottky contacts to n-type gallium nitride, LAMBERT Academic Publishing, Germany, ISBN: 978-3-8443-2483-9 (2011).
- Studies of Schottky contacts on indium phosphide, LAMBERT Academic Publishing, Germany, ISBN: 973-3-8443-0128-1 (2011).
- Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide, LAMBERT Academic Publishing, Germany, ISBN: 978-3-659-37863-8 (2013).
- Book Chapter: “Nanoindentation study on sputtered alumina films for spacecraft application”, in “Nanoindentation of Brittle Solids” CRC Press, Taylor & Francis Group, ISBN-13: 978-1-4665-9690-0/9781466596900, Page Nos. 299-303 (2014).
- Rare-earth Metal Schottky Contacts on p-type InP, LAMBERT Academic Publishing, Germany, ISBN: 978-3-659-86877-1 (2016).
- Thermally Stable Iridium-Based Schottky Contacts on n-type InGaN, LAMBERT Academic Publishing, Germany, ISBN: 978-3-659-86562-6 (2016).
- Gallium Nitride Based Metal-Insulator-Semiconductor (MIS) Structures, LAMBERT Academic Publishing, Germany, ISBN: 978-3-659-92714-0 (2016).
- Ti-Based Schottky Contacts to n-InP: Electronic Device Applications, LAMBERT Academic Publishing, Mauritius, ISBN: 978-613-9-8492-3 (2018).
- Studies on Schottky Electrodes to n-type Indium Phosphide: Electronic Device Applications, LAMBERT Academic Publishing, Mauritius, ISBN: 978-620-0-08238-1 (2019).
- Electrical Properties of n-GaN based MOS type Schottky Junctions: Microelectronic Devices LAMBERT Academic Publishing, Mauritius, ISBN: 978-620-3-20216-8 (2021).
Research interest
- Ohmic and Schottky Contacts to wide-bandgap semiconductors (GaN, ZnO, InP).
- Surface analysis of III-V and II-VI semiconductors.
- Defects in Electronic materials and devices using the DLTS technique.
- Polymer-based Schottky Contacts to GaN/InP semiconductors
- High-k Materials-based Schottky Contacts to GaN/InP semiconductors
- Fabrication and Characterization of MIS/MOS type Schottky Structures
- Heterojunctions
Research projects
National : 06 International : 01
Conference
National : 103 International : 42
Papers Presented in International Conferences/workshops: 42
- Santosh Kumar, Kruthika Krishnappa, M. Vinay Kumar, V. Rajagopal Reddy, K. Asokan, S. Krishnaveni
650 keV N2+ Ion implantation effects on the electrical properties of Pd/Ru/n-GaN SBDs
International Conference on Optoelectronics and Advanced Materials (ICOAM-2021), March 26-27, 2021, Department of Physics, Sri Venkateswara University, Andhra Pradesh, India.
- K. Ravindranatha Reddy and V. Rajagopal Reddy
Electrical and current transport properties of Au/cytosine/undoped-InP metal/polymer/ semiconductor diode
International Conference on Optoelectronics and Advanced Materials (ICOAM-2021), March 26-27, 2021, Department of Physics, Sri Venkateswara University, Andhra Pradesh, India.
- M. Uma and V. Rajagopal Reddy
“Electrical and carrier transport properties of Au/Pr6O11/n-GaN metal/insulator/ semiconductor diode”
International Conference on Optoelectronics and Advanced Materials (ICOAM-2021), March 26-27, 2021, Department of Physics, Sri Venkateswara University, Andhra Pradesh, India.
- C. Venkata Prasad and V. Rajagopal Reddy
Electrical Properties of Au/ZrO2/n-GaN MIS junction with a zirconium oxide insulating layer
International Conference on Advances in Nano-Optoelectronics and its application (ICNOPA-2020), October 12-14, 2020, Rajiv Gandhi University, Arunachal Pradesh.
- M. Uma and V. Rajagopal Reddy
Temperature-dependent electrical properties and current mechanism of Au/Pr6O11/n-GaN Metal/Insulator/Semiconductor Junction.
International Conference on Advances in Nano-Optoelectronics and its application (ICNOPA-2020), October 12-14, 2020, Rajiv Gandhi University, Arunachal Pradesh.
- M. Uma and V. Rajagopal Reddy
“Structural and electrical properties of Au/n-GaN Schottky junction with high-k praseodymium oxide as interlayer”
International workshop on the physics of semiconductor devices (IWPSD-2019), December 17-20, 2019, S. N. Bose National Center for Basic Sciences, Kolkata.
- C. Venkata Prasad and V. Rajagopal Reddy
Analysis of electrical parameters of Au/Y2O3/n-GaN metal/interlayer/ semiconductor (MIS) junction
International Conference on Advanced Semiconductor Materials and Devices (ICASMD-2018), 8-10 March, 2018, Indian Institute of Chemical Technology (IICT), Hyderabad.
- G. Nagaraju and V. Rajagopal Reddy
Schottky Barrier Parameters and Carrier Transport Properties of Dy/p-GaN Schottky diode at different Annealing Temperatures
International Conference on Advanced Materials (ICAM), (2017), December 14-15th, Department of Physics, St. Joseph’s College, Tiruchirappalli.
- N. Balaram, M. Siva Pratap Reddy and V. Rajagopal Reddy
Electrical properties of Au/n-InP Schottky diode modified using a high-k zirconium oxide (ZrO2) interlayer
XIX International Workshop on The Physics of Semiconductor Devices (IWPSD) (2017), December 11-15th, IIT Delhi, New Delhi.
- C. Venkata Prasad and V. Rajagopal Reddy
Electrical Properties of Ti/p-InP Schottky Structure with Orange G (OG) Organic Dye Interlayer
2nd International Conference on Condensed Matter & Applied Physics (ICC2017), (2017), November 24-25th, Govt. Engineering College, Bikaner.
- R.Padma and V.Rajagopal Reddy
The double Gaussian distribution of barrier heights in Ir/n-InGaN Schottky structure from I-V-T characteristics
International Conference on Energy Materials (ICEM-2014), July 28-30, 2014, Sathyabama University, Chennai, India.
- L.Dasaradha Rao, V.Rajagopal Reddy and M.Bhaskar Reddy
Electrical properties of rapidly annealed rare-earth metal Yb Schottky contacts on p-InP
International Conference on Energy Materials (ICEM-2014), July 28-30, 2014, Sathyabama University, Chennai, India.
- M. Siva Pratap Reddy, Jihwan Kim, Dae-Keun Shin, Ki-Hong Kim, Jung-Hee Lee, Ja-Soon Jang and V. Rajagopal Reddy
Effect of TMAH treatment on the electrical characteristics of Ni/Au/Al2O3/GaN MIS Schottky structures
The 2nd International Conference on Advanced Electromaterials (ICAE2013), Nov. 12-15, 2013, ICC-Jeju Convention Centre, Jeju, Korea.
- V Rajagopal Reddy, Chel-Jong Choi and R. Padma
Current conduction mechanism of Iridium (Ir) Schottky contacts to n-InGaN
International Conference on Science, Technology and Management (ICSTM-Sep 2013), Sep. 27-28, 2013, SITAMS, Chittoor, India.
- B Prasanna Lakshmi and V Rajagopal Reddy
Electrical Characterization of Au/Ta2O5/n-GaN MIS Structure
International Conference on Science, Technology and Management (ICSTM-Sep 2013), Sep. 27-28, 2013, SITAMS, Chittoor, India.
- I. Neelakanta Reddy, V. Rajagopal Reddy, N. Sridhara, V. S. Rao, M. Bhattacharya, P. Bandyopadhyay, A. K. Mukhopadhyay, A. K. Sharma and A. Dey
Microstructural and nanomechanical characterization of alumina thin film by pulsed rf magnetron sputtering
3rd International Conference on “High-Tech Aluminas and Unfolding their Business Prospects” (Aluminas-2013)”, March 7-9, 2013, The Indian Ceramic Society and CSIR-Central Glass & Ceramic Research Institute, Kolkata
- R. Padma, B. Prasanna lakshmi and V. Rajagopal Reddy
Thermal Annealing Effects on Electrical Properties of Ir/Ru Schottky Contacts on n-InGaN
International Conference on Recent Trends in Applied Physics and Material Science (RAM-2013), Feb. 01-02 (2013), Govt. College of Engineering & Technology, Bikaner.
- A. Umapathi, M.Siva Pratap Reddy, K.Ravindranatha Reddy and V. Rajagopal Reddy
Electrical Properties of Au/n-InP and Au/PVA/n-InP Schottky Structures
International Conference on Recent Trends in Applied Physics and Material Science (RAM-2013), Feb. 01-02 (2013), Govt. College of Engineering & Technology, Bikaner.
- L. Dasaradha Rao, N. Ramesha Reddy, A. Ashok Kumar and V. Rajagopal Reddy
Temperature-Dependent Electrical Properties of Rare-Earth Metal Er Schottky Contact on p-type InP
International Conference on Recent Trends in Applied Physics and Material Science (RAM-2013), Feb. 01-02 (2013), Govt. College of Engineering & Technology, Bikaner.
- M. Siva Pratap Reddy, H-S. Kang, D-S. Kim, Y-W. Jo, C-H. Won, R-H. Kim, K-I Jang, Chandrashekhar C.H, J-H. Lee and V. Rajagopal Reddy
Effect of temperature on series resistance determination of Au/polyvinyl alcohol/n-InP Schottky structures
International Conference on “Compound Semiconductor Week (CSW-2012)” August 27-30 (2012), Santa Barbara, USA.
- V. Lakshmi Devi, I. Jyothi and V. Rajagopal Reddy
Influence of rapid thermal annealing on electrical, structural properties of Au/Cu/n-InP Schottky diodes
International Conference on Advanced Materials (ICAM-2012), January 5-7, (2012), Loyola College, Chennai, India.
- B. Srinivasa Rao, B. Rajesh Kumar, V. Rajagopal Reddy and T. Subba Rao
Synthesis and Characterization of Transition Metal doped CdS Nanoparticles by Chemical Precipitation Technique
Third International Conference on Frontiers in Nanoscience and Technology, Cochin (Nano-2011), August 14-17 August (2011), Cochin University of Science and Technology, Kochi.
- S.Sankar Naik and V.Rajagopal Reddy
Barrier characteristics of Ni/V Schottky contacts on n-type InP based on temperature-dependent current-voltage (I-V) measurements
International Conference on Nanoscience, Engineering and Advanced Computing (ICNEAC-2011), July 8-10 (2011), Swarnadhra College of Engineering and Technology, Naraspur.
- V. Lakshmi Devi, I. Jyothi and V. Rajagopal Reddy
Analysis of barrier characteristics in Ru/Cu/n-InP Schottky diode based on current-voltage-temperature (I-V-T) measurements
International Conference on Advanced Materials and Its Applications (ICAMA-2011), March 4-5th (2011), Kalasalingam University, Srivilliputhur, India.
- V. Lakshmi Devi, I. Jyothi and V. Rajagopal Reddy
Temperature-dependent Schottky barrier characteristics of the Cu/Au Schottky contacts to n-type InP
International Conference on Advances in Condensed & Nano Materials (ICACNM-2011), February 23-26 (2011), Panjab University, Chandigarh.
- I. Jyothi and V. Rajagopal Reddy
W/Ti/Au multilayer ohmic contacts to n-type GaN
International Conference and Workshop on New Materials and Devices for Photovoltaic Applications (ICWNMDP – 2011), February 10-12 (2011), Madurai Kamaraj University, Madurai-625 021 (Best paper award).
- V. Lakshmi Devi, I. Jyothi and V. Rajagopal Reddy
Electrical characteristics of rapidly annealed Ru/Cu/n-InP Schottky diodes
International Conference and Workshop on New Materials and Devices for Photovoltaic Applications (ICWNMDP – 2011), February 10-12 (2011), Madurai Kamaraj University Madurai-625 021.
- B. Srinivasa Rao, B. Rajesh Kumar, V. Rajagopal Reddy and T. Subba Rao
Structural Properties of Nickel doped Cadmium Sulfide
International Symposium on Semiconductor Materials and Devices (ISSMD-2011), January 28-30 (2011), The M.S University of Baroda, Vadodara.
- M.Siva Pratap Reddy, N.Ramesha Reddy and V.Rajagopal Reddy
Analysis of possible current transport mechanisms in the Ni/Pd/n-GaN Schottky barrier diode in a wide temperature range
International Conference on Multifunctional Materials (ICMM), December 6-9 (2010), BHU, Varanasi.
- M.Bhaskar Reddy, D.Subba Reddy, S.Shankar Naik and V.Rajagopal Reddy
The influence of annealing temperature on electrical and structural of Pd/Ti Schottky contacts to n-type InP (111)
International Conference on Multifunctional Materials (ICMM-2010), Dec. 6-9 (2010), BHU, Varanasi.
- B. Srinivasa Rao, B. Rajesh Kumar, V. Rajagopal Reddy and T. Subba Rao
Studies on Structural Properties of Nickel doped Cadmium Sulfide Nano Thin films
International Conference on Multifunctional Material-2010 (ICMM-2010) December 6-9 (2010), BHU, Varanasi.
- B. Srinivasa Rao, B. Rajesh Kumar, V. Rajagopal Reddy and T. Subba Rao
Synthesis and Characterization of Nickel doped CdS Nanoparticles
International Conference on Nanoscience, Nanotechnology & Advanced Materials (NANOS-2010), GITAM University, Dec. 17-19 (2010).
- M. Siva Pratap Reddy and V. Rajagopal Reddy
Electrical Properties of Ni-based Schottky Diodes on n-type GaN as a Function of Annealing
Temperature
International Conference on Recent Trends in Materials and Characterization (RETMAC), Feb. 14-15 (2010), Surathkal.
- M. Siva Pratap Reddy, V. Janardhanam and V. Rajagopal Reddy
Rapid thermal annealing effect on electrical and structural properties of Ni/Pd Schottky contacts
on n-type GaN
XVth International Workshop on the Physics of Semiconductor Devices (IWPSD), Dec.15-19(2009), Delhi.
- N. Nanda Kumar Reddy, V. Janardhanam and V. Rajagopal Reddy
Current-Voltage-Temperature (I-V-T) Characteristics of Pt/Au Schottky Contacts on n-type InP
XVth International Workshop on the Physics of Semiconductor Devices (IWPSD), Dec.15-19(2009), Delhi.
- V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy and P. N.Reddy
Electrical properties of rapid thermally annealed Ru/n-InP (100) Schottky contacts
International Conference on Advanced Materials, Feb. 18-21(2008), Kottayam.
- A. Ashok Kumar, V. Janardhanam, V. Rajagopal Reddy and P. N.Reddy
Rapid thermal annealing effect of Pt/Pd Schottky contacts on n-InP (100)
International Conference on Advanced Materials, Feb. 18-21(2008), Kottayam.
- C.K.Ramesha, N. Ramesha Reddy and V.Rajagopal Reddy
Electrical characterization of Ru/Au Schottky barriers on n-type GaN and Pt/Ag/Au ohmic contacts on p-type GaN
8th International Conference on Optoelectronics, Fiber Optics and Photonics, Dec. 13-16 (2006), University of Hyderabad, Hyderabad.
- V. Rajagopal Reddy, Sang-Ho Kim and Tae-Yeon Seong
Thermally stable low-resistance Ti/W/Au and W/Ti/Au ohmic contacts to n-type GaN
International Workshop on Nitride Semiconductors, July 19-23 (2004), Pittsburg, USA.
- P.N. Reddy, C.K.Ramesh and V.Rajagopal Reddy
Investigation of Molybdenum Schottky contacts on n-type GaN
International Workshop on Nitride Semiconductors, July 19-23 (2004), Pittsburg, USA.
Papers Presented in National Conferences/Workshops: 103
- M. Uma and V. Rajagopal Reddy
“Analysis of Current-voltage and Capacitance-frequency characteristics of Au/Fe3O4/n-GaN heterojunction”
One day national conference on emerging trends, innovations & applications in science & technology, October 1, 2019, Nagarjuna college of management studies, Chickballapur.
102 C. Venkata Prasad and V. Rajagopal Reddy
Electrical Properties of Au/ZrO2/n-GaN Metal/Insulator/Semiconductor (MIS) Junction at Room Temperature.
National Conference on Novel Materials for Device Applications (NCNMDA-2018), 4-5 November 2018, Department of Physics, Sri Venkateswara University, Tirupati.
- N. Balaram and V. Rajagopal Reddy
Electrical and current conduction mechanism of Au/n-InP Schottky junction with a cupric oxide interlayer.
National Conference on Novel Materials for Device Applications (NCNMDA-2018), 4-5 November 2018, Department of Physics, Sri Venkateswara University, Tirupati.
- C. Venkata Prasad and V. Rajagopal Reddy
Electrical parameters of Au/Gd2O3/n-GaN MIS junction with a high-k rare-earth oxide interlayer.
Andhra Pradesh Science Congress (APSC-2018), 9-11 November 2018, Yogi Vemana University, Kadapa.
- N. Balaram and V. Rajagopal Reddy
Electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer.
Andhra Pradesh Science Congress (APSC-2018), 9-11 November 2018, Yogi Vemana University, Kadapa.
- B. Asha and V. Rajagopal Reddy
Electrical characteristics of yttrium Schottky contact on p-type GaN at different annealing temperatures.
Andhra Pradesh Science Congress (APSC-2018), 9-11 November 2018, Yogi Vemana University, Kadapa.
- K. Sreenu and V. Rajagopal Reddy
Electrical properties of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer.
Andhra Pradesh Science Congress (APSC-2018), 9-11 November 2018, Yogi Vemana University, Kadapa.
- M. Uma and V. Rajagopal Reddy
Electrical properties of Au/La2O3/n-GaN MIS junction with a rare-earth lanthanum oxide interlayer.
Andhra Pradesh Science Congress (APSC-2018), 9-11 November 2018, Yogi Vemana University, Kadapa.
- R. Padma, C. Venkata Prasad and V. Rajagopal Reddy
The electrical properties of Ti/p-InP Schottky structure with and without polyethylene oxide (PEO) Interlayer
104th Indian Science Congress (2017), January 3-7th, Sri Venkateswara University, Tirupati.
- V. Manjunath and V. Rajagopal Reddy
Capacitance-voltage characteristics of Au/Sm2O3/n-GaN Schottky structure
104th Indian Science Congress (2017), January 3-7th, Sri Venkateswara University, Tirupati.
- G. Nagaraju and V. Rajagopal Reddy
Effect of annealing temperature on electrical properties of Dy/p-GaN Schottky diode
104th Indian Science Congress (2017), January 3-7th, Sri Venkateswara University, Tirupati.
- L.Dasaradha Rao, K. Shanthi Latha, V. Rajagopal Reddy
Influence of rapid thermal annealing on electrical characteristics of Au/Y/p-InP/Pt Schottky barrier diode
4thNational Conference on Condensed Matter Physics and Applications (CMPA-2016), May 23-24th, Department of Physics, Manipal Institute of Technology Manipal University, Manipal – 576104, K.A.
- R.Padma, K.Shanthi Latha and V.Rajagopal Reddy
Electrical properties of rapidly annealed Ru/V Schottky contacts on n-type InP
National Conference on Advanced Functional Materials (NCAFM-2016), March 23-24, 2016 at Department of Physics, Sri Venkateswara University, Tirupati.
- V.Manjunath and V.Rajagopal Reddy
Temperature-dependent electrical properties of Au/Bi0.5Na0.5-TiO3/n-GaN MIS diode
National Conference on Advanced Functional Materials (NCAFM-2016), March 23-24, 2016 at Department of Physics, Sri Venkateswara University, Tirupati
- L. Dasaradha Rao and V. Rajagopal Reddy
Electrical Parameters and Series Resistance Analysis of Au/Y/p-InP/Pt Schottky Barrier Diode at Room Temperature
60th DAE Solid State Physics Symposium, (DAE-SSPS-2015), PP. 273, Dec. 21-25th (2015), Amity University UP, Noida.
- L. Dasaradha Rao, M. Bhaskar Reddy and V. Rajagopal Reddy
Influence of Annealing Temperature on Electrical Properties of Er/p-InP Schottky barrier diode
National Conference on Recent Trends in Material Science (RTMS-15), 01-02nd, March 2015, Department of Physics, S. V . Degree College, KADAPA-516003, A.P
- R. Padma, K. Ravindra Reddy and V. Rajagopal Reddy
The Electrical Parameters and Current Conduction Mechanism of Au/PVDF/n-InP Schottky barrier diode
National Conference on Recent Trends in Material Science (RTMS-15), 01-02nd, March 2015, Department of Physics, S. V . Degree College, KADAPA-516003, A.P
- R. Padma and V. Rajagopal Reddy
Annealing effects on the electrical characteristics of Ru/V Schottky contacts to n-type InP
National Conference on Condensed Matter Physics and Applications (CMPA-15), 27-28, March 2015, Department of Physics Manipal Institute of Technology, Manipal University, Manipal – 576104, India.
- L. Dasaradha Rao and V. Rajagopal Reddy
Effects of annealing temperature on the Electrical properties of Yb/p-InP/Pt Schottky barrier diode
National Conference on Condensed Matter Physics and Applications (CMPA-15), 27-28, March 2015, Department of Physics Manipal Institute of Technology, Manipal University, Manipal – 576104, India.
- R. Padma and V. Rajagopal Reddy
Determination of the Characteristic Parameters of Au/PVDF/n-InP Schottky Structure from Current-Voltage and Capacitance-Voltage Measurements
Solid State Physics Symposium, (59th DAE – SSPS 2014), pp. 267, Dec. 16-20 (2014), VIT University, Vellore
- M. Bhaskar Reddy, R. Padma and V. Rajagopal Reddy
Electrical Parameters and Current Conduction Mechanism in Cr/Au/n-InP Schottky Structure at Different Annealing Temperatures
Solid State Physics Symposium, (59th DAE – SSPS 2014), pp. 153, Dec. 16-20 (2014), VIT University, Vellore
- M. Bhaskar Reddy and V.Rajagopal Reddy
Electrical properties of Cr/Au Schottky contacts to n-type InP as a function of annealing temperature
National Conference in Advanced Materials and its Applications (NCAMA-14), 4-5th, April 2014, Annamalai University, Tamil Nadu.
- L.Dasaradha Rao and V. Rajagopal Reddy
Electrical properties of Er/p-InP/Pt Schottky barrier diode as a function of annealing temperature
National Conference in Advanced Materials and its Applications (NCAMA-14), 4-5th, April 2014, Annamalai University, Tamil Nadu.
- I.Neelakanta Reddy, Arjun Dey, N. Sridhara, A. Rajendra, V.S. Rao, A. K. Sharma and V. Rajagopal Reddy
Multifunctional oxide based films for spacecraft thermal applications
National Convention of Metallurgical and Materials Engineering & National Seminar on Multifunctional and Adaptive Materials, 6-7th February 2014.
- B.Prasanna Lakshmi and V.Rajagopal Reddy
The double Gaussian distribution of inhomogeneous barrier heights in Au/SiO2/n-GaN metal-insulator-semiconductor diodes
National Conference on Advanced Materials for Energy Applications (NCEMEA-2014), 31st Jan and 1st Feb. 2014, Osmania University, Hyderabad.
- R. Padma and V. Rajagopal Reddy
Electrical properties of Au/Poly(ethlmethacrylate)/n-InP organic-modified Schottky diode
National Conference on Advanced Materials for Energy Applications (NCEMEA-2014), 31st Jan and 1st Feb. 2014, Osmania University, Hyderabad.
- R. Padma and V. Rajagopal Reddy
Temperature dependence of current-voltage (I-V) characteristics of Ir/n-InGaN Schottky barrier diodes
National Conference on Recent Trends in Materials Science (RTMS-13), Nov.7 (2013), Department of Science & Humanities, M. Kumarasamy College of Engineering (Autonomous), Karur, India.
- A.Ashok Kumar, V. Janardhanam, V. Rajagopal Reddy and C.J. Choi
Influence of series resistance and interface state density on the electrical properties of Pt/PEDOT:PSS/n-Ge heterojunction
National Seminar on Nanomaterials and Nanotechnology [NSNNT-2013], Oct. 2 (2013), Department of Physics, Govt. Degree & PG College, Puttur, India
- I. N. Reddy, N. Sridhara, M. Venkatanarayana, V. S. Rao, V. Rajagopal Reddy, A. Dey and A. K. Sharma
High emittance coatings for space applications
National Conference on Recent Trends in Materials Science and Technology (NCMST), July 10 – 12 (2013), IIST, Trivandrum, Kerala
- A.Umapathi and V. Rajagopal Reddy
Effect of annealing on the electrical characteristics of Au/PMMA/n-InP Schottky structure
National Workshop on “Advanced Materials Characterization Techniques” (AMCT-2013), March 23 (2013), Dept. of Physics, S.V. University, Tirupati, India.
- A. Ashok Kumar, V. Rajagopal Reddy, V. Janardhanam, and Chel-Jong Choi
Estimation of Schottky barrier parameters of Pt/PEDOT:PSS/n-Ge heterojunction
National Workshop on “Advanced Materials Characterization Techniques” (AMCT-2013), March 23 (2013), Dept. of Physics, S.V. University, Tirupati, India.
- Prasanna Lakshmi and V.Rajagopal Reddy
Capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements of Au/SiO2/n-GaN MIS structure
National Conference on Advances in Material Science and Technologies (AMST-12), Nov. 19-21 (2012), Department of Physics, Kakatiya University, Warangal, India.
- R.Padma, B.Prasanna Lakshmi and V.Rajagopal Reddy
Electrical and structural properties of Ir Schottky contacts on n-type InGaN at different annealing temperatures
National Conference on Advances in Material Science and Technologies (AMST-12), Nov. 19-21 (2012), Department of Physics, Kakatiya University, Warangal, India.
- I. Neelakanta Reddy, M. Franco, R. Uma Rani, N. Sridhara, V. Rajagopal Reddy and A.K. Sharma
Corrosion resistance of RF sputtered alumina thin films on aluminum alloys
National Symposium on Electrochemical Science and Technology (NSEST-2012), Aug 24-25, (2012), Bangalore, India (Best paper award).
- N. Nanda Kumar Reddy and V. Rajagopal Reddy
Thermal annealing effects on electrical and structural characteristics of Pt/Ru Schottky rectifier to n-type GaN
National Conference on Latest Trends in Emerging Materials (NCLTEM-2012), January 20-21 (2012), JNTUH College of Engineering, Jawaharlal Nehru Technological University, Hyderabad.
- B. Prasanna Lakshmi, A. Ashok Kumar and V. Rajagopal Reddy
Temperature –dependent electrical characteristics of Au/SiO2/n-GaN MIS diode
National Conference on Latest Trends in Emerging Materials (NCLTEM-2012), January 20-21 (2012), JNTUH College of Engineering, Jawaharlal Nehru Technological University, Hyderabad.
- M. Siva Pratap Reddy, A. Ashok Kumar and V. Rajagopal Reddy
Electrical properties of Au/n-InP Metal-inorganic and Au/Polyvinyl Alcohol (PVA)/n-InP Metal-organic-inorganic Schottky structures
National Conference on Recent Trends in Materials Science (RTMS-2011), Oct. 8-10 (2011), Jaypee University of Information Technology, Waknaghat, Solan-173234, H.P.
- N. Ramesha Reddy, B. Prasanna Lakshmi and V. Rajagopal Reddy
Electrical properties of rapidly annealed Ir and Ir/Au Schottky contacts on n-type GaN
National Conference on Recent Trends in Materials Science (RTMS-2011), Oct. 8-10 (2011), Jaypee University of Information Technology, Waknaghat, Solan-173234, H.P.
- M. Bhaskar Reddy, D. Subba Reddy, S. Sankar Naik and V. Rajagopal Reddy
Temperature dependent electrical characteristics of the Pd/Ti/n-InP Schottky barrier diodes
National Conference on Recent Trends in Materials Science (RTMS-2011), Oct. 8-10 (2011), Jaypee University of Information Technology, Waknaghat, Solan-173234, H.P.
- N. Nanda Kumar Reddy, I. Jyothi and V. Rajagopal Reddy
Double Gaussian distribution of inhomogeneous barrier height in Ru/Pt/n-GaN Schottky barrier diodes
Solid State Physics Symposium, (55th DAE – SSPS 2010) Dec. 26-30 (2010), Manipal University, Manipal.
- B. Srinivasa Rao, B. Rajesh Kumar, V. Rajagopal Reddy and T. Subba Rao
Synthesis and characterization of CdS nano particles by chemical precipitation method
2nd National Conference on Advances in New Engineering Materials and Characterization (AMC-2010) Dec. 28-29 (2010).
- N. Nanda Kumar Reddy and V. Rajagopal Reddy
Temperature-dependent current-voltage (I-V) characteristics of the Ru/Pd/n-GaN diodes with inhomogeneous Schottky barrier height
National Seminar on Emerging Materials and Technologies (EMT-2010), Oct 9-10 (2010), Anantapur.
- Y. M. K. Reddy, M. K. Naga Raj, S. Shankar Naik and V. Rajagopal Reddy
Current-voltage-temperature (I-V-T) measurements of nickel/n-InP Schottky diodes
National Seminar on Emerging Materials and Technologies (EMT-2010), Oct 9-10 (2010), Anantapur.
- P. Narasimha Reddy, S. Sankar Naik and V. Rajagopal Reddy
Current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of Pd/V Schottky contacts on undoped n-InP (100)
National Seminar on Emerging Materials and Technologies (EMT-2010), Oct 9-10 (2010), Anantapur.
- M. Siva Pratap Reddy, I. Jyothi and V. Rajagopal Reddy
Annealing Temperature Effect on Electrical and Structural Properties of Ni/Ru Schottky contacts to n-type GaN
National Seminar on Emerging Materials and Technologies (EMT-2010), Oct. 9-10 (2010), Anantapur.
- B. Srinivasa Rao, B. Rajesh Kumar, V. Rajagopal Reddy and T. Subba Rao
Studies on Structural and Optical Properties of Cadmium Sulfide Nano particles
National Seminar on Emerging Materials and Technologies (EMT-2010), Oct. 9-10 (2010), Anantapur.
- S. Shankar Naik, N. Nanda Kumar Reddy and V. Rajagopal Reddy
Gaussian distribution of inhomogeneous barrier heights in Pd/V/n-InP (100) Schottky barrier diodes
National Conference on recent trends in exotic materials, August 26-28 (2010), Greater Noida, Delhi.
- S.Shankar Naik, M.Siva Pratap Reddy, V.Rajagopal Reddy, M. K. Naga Raju, T. Lakshmi Narasappa and Y. M. K Reddy
Analysis of temperature-dependent electrical properties of the nickel Schottky contacts to n-type Indium Phosphide (InP)
National conference on Advanced Materials (NCAM-2010), Aug 25-27 (2010), PSN College of Engineering & Technology, Tirunelveli-627 152, Tamilnadu.
- I. Jyothi, M. Siva Pratap Reddy, N. Nanda Kumar Reddy and V. Rajagopal Reddy
Annealing effects on electrical parameters and interfacial reactions of Ni/Mo Schottky contacts to n-type GaN
National Conference on Engineering of Materials through Energetic Particles (NCEMEP) April 8-10 (2010), Shravanabelagola.
- M. Siva Pratap Reddy, I. Jyothi and V. Rajagopal Reddy
Electrical and Structural properties of Ni/Pd/n-GaN Schottky diode
National Seminar on Photonics and Materials (NASPAM-2010), March 25-27 (2010) Dhanbad.
- M.Siva Pratap Reddy, I.Jyothi, N. Nanda Kumar Reddy and V. Rajagopal Reddy
Annealing Effects on Deep level defects in the Si-doped GaN
National Conference on Materials for Energy Storage and Conversion (NCMESC), January 23-24 (2010) Tirupati.
- N.Ramesha Reddy and V.Rajagopal Reddy
Electrical and structural properties of rapidly annealed Ru/Au Schottky contacts to n-type GaN
National Conference on Solid State Ionics: Materials for Novel Devices (NCSSI), Dec. 7-9th (2009), Sagar.
- S.Shankar Naik and V.Rajagopal Reddy
Temperature-dependence of electrical properties of Ni/Au Schottky contacts on n-type InP
National Conference on Solid State Ionics: Materials for Novel Devices (NCSSI), Dec. 7-9th (2009), Sagar.
- M. Bhaskar Reddy, S.Shankar Naik and V. Rajagopal Reddy
Annealing effects on the electrical properties of Ni/Au and Pt/Au Schottky contacts to n-type InP
National Conference on Solid State Ionics: Materials for Novel Devices (NCSSI), Dec. 7-9th (2009), Sagar.
- M. Siva Pratap Reddy, I. Jyothi and V. Rajagopal Reddy
Annealing behavior on Electrical properties of Ni based Schottky contacts on n-type GaN
National Conference on Advances in Nano Materials, Devices and Technologies (NCANDT), July. 11-12 (2009), Kadapa.
- D. Subba Reddy, N. Nanda Kumar Reddy and V. Rajagopal Reddy
Annealing temperature Effect on Electrical properties of Ti/Pt Schottky contacts to n-type InP
National Conference on Advances in Nano Materials, Devices and Technologies (NCANDT),
July 11-12 (2009), Kadapa.
- N.Ramesha Reddy, K.Ravindranatha Reddy and V.Rajagopal Reddy
Rapid thermal annealing behaviour of palladium Schottky contacts on n-type GaN
National Conference on Emerging Materials, Devices and Technologies (EMDT), Feb.24-25 (2009), Tirupati.
- I.Jyothi, M.Siva Pratap Reddy, P.Koteswara Rao and V.Rajagopal Reddy
Annealing effects on electrical properties of Ni/Mo Schottky contacts to n-type GaN
National Conference on Emerging Materials, Devices and Technologies (EMDT), Feb.24-25 (2009), Tirupati.
- M.Ravinandan, P.Koteswara Rao and V.Rajagopal Reddy
Temperature-dependent electrical properties of Pd/Au Schottky contacts on n-type GaN
National Conference on Emerging Materials, Devices and Technologies (EMDT), Feb.24-25 (2009), Tirupati.
- M. Bhaskar Reddy, V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy and P. Narasimha Reddy
Structural and electrical properties of rapidly annealed Ni/Au Schottky contacts to n-InP
National Conference on Emerging Materials, Devices and Technologies (EMDT), Feb.24-25 (2009), Tirupati.
- P.Koteswara Rao and V. Rajagopal Reddy
Effect of annealing temperature on barrier parameters of ITO/n-GaN Schottky diode
Solid State Physics Symposium, Dec. 16-20 (2008), BARC, Mumbai.
- A. Ashok Kumar, V. Janardhanam, V. Rajagopal Reddy and P. N.Reddy
Electrical and structural properties of Pd/Pt Schottky contacts to n-InP (100)
Solid State Physics Symposium, Dec. 16-20 (2008), BARC, Mumbai.
- N. Ramesha Reddy and V.Rajagopal Reddy
Structural and electrical characteristics of Rh/Au/n-GaN Schottky diode: Annealing temperature effects
National Conference on Semiconductor Materials & Technology, Oct. 16-18 (2008), Haridwar.
- P.Koteswara Rao, M.Ravinandan, V.Rajagopal Reddy and C.K.Ramesha
Current-voltage characteristics of Pd/Au/n-GaN Schottky diode in wide temperature range
National Conference on Semiconductor Materials & Technology, Oct. 16-18 (2008), Haridwar.
- M. Bhaskar Reddy, V. Janardhanam, A. Ashok Kumar, V. Rajagopal Reddy and P. Narasimha Reddy
Behaviour of annealing temperature on electrical and structural properties of Pd/Au/n-InP (111) Schottky diode
National Conference on Semiconductor Materials & Technology, Oct. 16-18 (2008), Haridwar.
- N.Ramesha Reddy, P.Koteswara Rao and V.Rajagopal Reddy
Electrical and Structural Properties of Rh/Au Schottky contacts on n-type GaN
National Conference on Advanced Materials Devices and Technologies, Feb.20-22(2008), Tirupati.
- M.Ravinandan, P.Koteswara Rao and V.Rajagopal Reddy
Characterization of Pt/Au/n-GaN Schottky interfaces based on I-V-T characteristics
National Conference on Advanced Materials Devices and Technologies, Feb.20-22(2008), Tirupati.
- C.K.Ramesha, M.Ravinandan, P.Koteswara Rao and V.Rajagopal Reddy
Annealing effect on structural and electrical properties of Cu/Au/n-GaN Schottky diode
National Conference on Advanced Materials Devices and Technologies, Feb.20-22(2008), Tirupati.
- A. Ashok Kumar, V. Janardhanam, V. Rajagopal Reddy and P. N.Reddy
Rapid thermal annealing effect of Pt/Pd contacts on n-type InP (100)
National Conference on Advanced Materials Devices and Technologies, Feb.20-22(2008), Tirupati.
- A. Ashok Kumar, V. Janardhanam, V. Rajagopal Reddy and P. N.Reddy
Effect of annealing on electrical properties of Pd/InP Schottky diodes
Solid State Physics Symposium, Dec. 27-31 (2007), University of Mysore, Mysore.
- V. Janardhanam, A. Ashok Kumar, K. Jagadeswara Reddy, V. Rajagopal Reddy and P. Narasimha Reddy
Annealing Induced Defects in LEC Grown undoped InP
National Conference on Thermo Physical Properties (NCTP-IV), Sept. 20-22 (2007), Kollam.
- A. Ashok Kumar, V. Janardhanam, K. Jagadeswara Reddy, V. Rajagopal Reddy and P. Narasimha Reddy
Temperature Dependence of Current-Voltage Characteristics of the Pd/n-InP Schottky Diode
National Conference on Thermo Physical Properties (NCTP-IV), Sept. 20-22 (2007), Kollam.
- N.Ramesh Reddy and V.Rajagopal Reddy
Electrical Properties of Rhodium Schottky Contacts on n-type GaN
National Conference on Smart Materials and Recent Technologies, February 22-23 (2007).
- P.Koteswara Rao and V.Rajagopal Reddy
Thermal annealing temperature effects on Schottky barrier parameters of ITO/n-GaN diode
National Conference on Smart Materials and Recent Technologies, February 22-23 (2007).
29. P.Koteswara Rao, C.K.Ramesha, N.Ramesha Reddy and V.Rajagopal Reddy
Electrical characteristics of Cu/Au Schottky contacts on n-type GaN
2nd National Conference on Condensed Matter and Materials Physics, February 1-3 (2007), University of Rajasthan, Jaipur.
28. C.K.Ramesha, P.Koteswara Rao and V.Rajagopal Reddy
Schottky barrier parameters of Ruthenium contacts to n-type GaN
Solid State Physics Symposium, Dec. 26-30 (2006), Barkatullah University, Bhopal.
27. N. Ramesha Reddy and V.Rajagopal Reddy
Formation of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN
National Conference on Novel Materials and Technologies, Feb. 17-18 (2006), S.V.University, Tirupati.
- C.K.Ramesha and V.Rajagopal Reddy
Electrical characteristics of Ru/n-GaN Schottky diodes
National Conference on Novel Materials and Technologies, Feb. 17-18 (2006), S.V.University, Tirupati.
- K.Jagadeswara Reddy, P.N. Reddy, V.Rajagopal Reddy and S.V.Reddy
Effects of thermal annealing on electrical characteristics of palladium Schottky contacts on n-type GaN
National Conference on Novel Materials and Technologies, Feb. 17-18 (2006), S.V.University, Tirupati.
- C. K. Ramesh and V. Rajagopal Reddy
Thermal annealing behaviour of Mo Schottky Contacts on n-type GaN
Solid State Physics Symposium, Dec. 26-30 (2005), BARC, Mumbai.
- C.K.Ramesh and V.Rajagopal Reddy
Thermally stable low-resistance Pd/Re and Pt/Re/Au ohmic contacts to p-type GaN
National Conference on Advanced Materials and Technology, Dec. (2004), Dept. of Physics & Electronics, DAV College, Amritsar.
- C.K.Ramesh and V.Rajagopal Reddy
Investigation of Ohmic Mechanism for Ti/Al/Re/Au contacts to n-type GaN
National Conference on Emerging Materials and Technologies, Aug. 3-4 (2004), Tirupati
- H.B.Bhuvaneswari, V.Rajagopal Reddy, G.M. Rao and R. Chandramani
Electrical behavior of ZrN Schottky structure deposited by dc reactive magnetron sputtering
Recent Developments & Challenges in Physics, Dec. 19-22, Hyderabad (2002).
- V.Rajagopal Reddy, C.K.Ramesh, S.V. Reddy and P.N. Reddy
Optical properties of gallium nitride
Recent trends in Optoelectronic Materials and Devices, Nov. 21-22 (2002).
- S.V. Reddy, V. Rajagopal Reddy, and P.N. Reddy
Development of thermal nitridation reactor for preparation of thin silicon nitride films
The Symposium on Instrumentation, Oct. 25-26 (2001).
- S. V.Reddy, V. Rajagopal Reddy, and P.N. Reddy
Optical properties of thin silicon nitride films
National Seminar on Solid State Spectroscopy, Aug. (2001), Tirupati.
- S. V. Reddy, V. Rajagopal Reddy, and P.N. Reddy
Design and development of thermal nitradation reactor for preparation of very thin silicon nitride films
The National Symposium on Instrumentation, 8-11 (2000).
- S.V.Reddy, P. N. Reddy, K.G. Naik, K.S.R.K.Rao and V.Rajagopal Reddy
Studies on interface states in MIS devices using DLTS
Solid State Physics (India), Vol.43 (2000)
- B.P.N.Reddy, V.Rajagopal Reddy, S.V.Reddy and P.N.Reddy
Conformation-dependent C-13 NMR chemical shifts in the solid-state polypeptides using CP/MAS method
5th National Symposium on Magnetic Resonance, Feb. 23-26 (1999), Dehradun (India).
- P.N.Reddy, V. Rajagopal Reddy, S.V. Reddy and B.P.N. Reddy
Study of spin lattice relaxation times in some amino acids using pulsed NMR
5th National Symposium on Magnetic Resonance, Feb. 23-26 (1999), Dehradun (India).
- P.N. Reddy, S.V.P. S. V. Reddy, V. Rajagopal Reddy, and B.P.N.Reddy
Computer (IBMPC) based I-V, C-V system
The National Symposium on Instrumentation, Oct. 7-10 (1998), Ranchi.
- S.V.Reddy, V.Rajagopal Reddy, P.N.Reddy and B.P.N. Reddy
I-V, C-V and DLTS studies in Au/n-Si: Pd Schottky diode
National Conference on Advance in Condensed Matter Physics, Feb. 26-28 (1998), Pondichery.
- S.V. Reddy, V.Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
Determination of carrier capture cross-section of deep level defect in Au/n-Si:Pd
Solid State Physics (India), Vol. 41C (1998).
- V. Rajagopal Reddy, S.V.Reddy, P.N. Reddy and B.P.N. Reddy
A simple rf gate with pulse programmer and rf oscillator for pulsed NMR
Solid State Physics (India), Vol.41C, (1998).
- S. V. Reddy, V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
Deep level studies on Au/n-Si: Pd Schottky diodes using DLTS
Solid State Physics (India), Vol.40C, pp. 452 (1997).
- V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
A simple and inexpensive wideband receiver amplifier for pulsed NMR
Solid State Physics (India), Vol.40C, pp. 450 (1997).
- V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
IBM controlled data acquisition system and temperature controller
The National Symposium on Instrumentation, Oct. 22-25 (1997).
- V. Rajagopal Reddy, P.N.Reddy and B.P.N. Reddy
A receiver with phase sensitive detector for pulsed NMR
Solid State Physics (India), Vol. 38C, pp. 471 (1995).
- V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
An automated pulse programmer for pulsed NMR spectrometer
The National Symposium on Instrumentation, Nov. 8-11 (1994).
- V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
A microcomputer (IBM PC) controlled data acquisition system for pulsed NMR spectrometer
The National Symposium on Instrumentation, Jan. 9-12 (1994).
- V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
Microcomputer (IBM PC) based transmitter for pulsed NMR spectrometer
Solid State Physics (India), Vol. 37C, pp. 509 (1994).
- V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
A simple and inexpensive phase sensitive detector for pulsed NMR Spectrometer
Solid State Physics (India), Vol. 36C, pp. 520 (1993).
- V. Rajagopal Reddy, P.N. Reddy and B.P.N. Reddy
Microprocessor based transmitter for pulsed NMR spectrometer
Solid State Physics (India), Vol. 35C, pp. 466 (1992).
- State Best Teacher Award, Govt. of Andhra Pradesh, Amaravati (2019)
- UGC Mid-Career Award, Basic Science Research (BSR) Programme (2017)
- Fellow, Andhra Pradesh Akademi of Sciences, Amaravathi, India (since 2016)
- Visiting Research Fellowship – School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, (SPRC), Chonbuk National University, Jeonju19 561-756, KOREA, 2013 (Feb)-2014 (Jan).
- Visiting Fellowship – LED-IT Fusion Technology and Research Center (LIFTRC), Yeungnam University, Korea, 2014 (January-February).
Research Guidance
Ph.D. Degrees Awarded: 23, M.Phil: 03
Research Collaboration with National and International Labs
- Department of Applied Physics and Instrumentation, Indian Institute of Science (IISc), Bangalore.
- Department of Electronics, University of Delhi, New Delhi.
- School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, (SPRC), Chonbuk National University, Jeonju, Korea.
- Department of Material Science and Engineering, Gwangju Institute of Science & Technology, Gwangju,
- Seoul National University of Science and Technology, Seoul, Korea.
- LED-IT Fusion Technology and Research Center (LIFTRC), Yeungnam University, Geyonbuk, Korea.
Abroad Visits
- Visiting Professor : Chonbuk National University, Korea 1st June-30th June, 2018
- Visiting Professor : Chonbuk National University, Korea 10th May-25th June, 2016
- Visiting Professor : Chonbuk National University, Korea 2013(Feb)-2014(Jan)
- Research Professor : Gwangju Institute of Science & 2002(Sep)-2003(Dec) Technology, Korea
- Attended workshop : International Centre for Theoretical 29thOct-23rdNov, 2001 Physics (ICTP), Italy
Other Contributions made by me towards Inventions and Innovations:
The following contributions are made for Science and technology improvements:
- For the first time, established semiconductors device fabrications laboratory in the Department of Physics, Sri Venkateswara University.
- Developed new multilayer low-resistance Ti/Al/Re/Au ohmic contacts (electrode) on wide band gap semiconductor (n-type GaN) for light emitting diodes (LED)/laser diodes and this work was patented.
- New metallization schemes are fabricated as an electrode on p-type GaN. Specific contact resistance as low as was obtained which could be used for the fabrication of electronic devices.
- Fabricated thermally stable single and multilayer Schottky contacts on GaN and found that these contacts were suitable for the development of high temperature electronic devices.
- Developed single and multilayer metallization schemes on InP as Schottky contacts and found that these metallization schemes are promising materials for the development of electronic devices.
- Deep level transient spectroscopy (DLTS) measurements were carried out to obtain trap parameters such as activation energy, trap density, carrier capture cross-section, depth of the defect in semiconductor. These parameters are useful for the optimization of semiconductor growth or device fabrication.
- Developed organic/polymer based Schottky contacts on GaN and InP semiconductors and found that these contacts are highly useful as a conducting electrode layer in organic devices, since electronic devices are moving to the ultimate scale of molecular entities.
- Fabricated GaN-based metal-insulator-semiconductor (MIS) structures and investigated their electrical properties and found that high barrier height and low leakage current, which are critical for the development of MOSFETS/ MESFETS.
Gist of other Contributions:
- Design and developed laboratory experiments to post-graduate students.
- Guided the students to design and development of laboratory experiments.
- Prepared laboratory manual for M.Sc (Physics) and M.Sc (Electronics) PG students.
- Evaluation of M.Sc Electronics project dissertations etc.
- Actively participating various activities of National Integration, secularism, democracy and socialism.
- Actively participating to providing information about latest development in scientific and technical and its impact on the society.
- Delivered lecture on “Principle of Basic Electronics” Mangalore University, Mangalore.
- Delivered lecture on “CMOS devices and its applications”, Bangalore University, Bangalore.
- Lecture on “Digital Electronics and its applications” Academic Staff College, Refresher course in Physics, Mangalore University, Mangalore.
- Evaluated the project works of MS students in School of Semiconductor and Chemical Engineering, Chonbuk National University, Korea.
- Delivered 5 lectures on basic metal-semiconductor contacts for MS students in Chonbuk National University, Korea.
- Invited speaker on “Fabrication and Characterization of blue LED”, in LED-IT Fusion Technology and Research Center (LIFTRC), Yeungnam University, Korea.
- Seminar on “Formation of thermally stable Schottky Contacts on GaN and their characterization” in Semiconductor Physics Research Center (SPRC), Korea.
- Lecture on “Fabrication of thermally stable Low-resistance Ohmic contacts on GaN” in Gwangju Institute of Science and Technology, Gwangju, Korea.
- Seminar on “Basic VLSI circuits” at Centre for Theoretical Physics (ICTP), Trieste, Italy.
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